Inchange Semiconductor Product Specification 2SB1022 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1417 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 固 D N O IC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER R O T UC M E S GE VALUE UNIT Open emitter -60 V Collector -emitter voltage Open base -60 V Emitter-base voltage Open collector -5 V -7 A -0.2 A N A H C Collector-base voltage IN IC Collector current IB Base current PC Collector power dissipation CONDITIONS Ta=25℃ 2.0 W TC=25℃ 30 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1022 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-14mA -2.0 V Base-emitter saturation voltage IC=-3A ;IB=-6mA -2.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V hFE-2 DC current gain IC=-7A ; VCE=-3V VBEsat 体 半导 CONDITIONS 固电 IN 2 TYP. MAX -60 OND 1000 UNIT V R O T UC 2000 IC M E ES G N A CH MIN 15000 Inchange Semiconductor Product Specification 2SB1022 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3