ISC 2SB1022

Inchange Semiconductor
Product Specification
2SB1022
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High DC current gain
・Low saturation voltage
・Complement to type 2SD1417
APPLICATIONS
・High power switching applications
・Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
导体
半
电
固
D
N
O
IC
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
R
O
T
UC
M
E
S
GE
VALUE
UNIT
Open emitter
-60
V
Collector -emitter voltage
Open base
-60
V
Emitter-base voltage
Open collector
-5
V
-7
A
-0.2
A
N
A
H
C
Collector-base voltage
IN
IC
Collector current
IB
Base current
PC
Collector power dissipation
CONDITIONS
Ta=25℃
2.0
W
TC=25℃
30
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1022
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-3A ;IB=-6mA
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-7A ;IB=-14mA
-2.0
V
Base-emitter saturation voltage
IC=-3A ;IB=-6mA
-2.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-4.0
mA
hFE-1
DC current gain
IC=-3A ; VCE=-3V
hFE-2
DC current gain
IC=-7A ; VCE=-3V
VBEsat
体
半导
CONDITIONS
固电
IN
2
TYP.
MAX
-60
OND
1000
UNIT
V
R
O
T
UC
2000
IC
M
E
ES
G
N
A
CH
MIN
15000
Inchange Semiconductor
Product Specification
2SB1022
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3