Transistors SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High voltageVCEO=120V 0.4 3 1 Low noise. 0.55 High hFE.hFE=200 to 700 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Small package. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 120 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA hFE VCE = 6 V, IC = 2 mA DC current gain Collector-emitter saturation voltage Testconditons Min Typ 200 700 VCE (sat) IC = 10 mA, IB = 1 mA Transition frequency fT Collector output capacitance Cob Noise figure NF VCE = 6 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz 0.3 100 V MHz 4 pF VCB=6 V, IC=0.1 mA, f=100 Hz,Rg=10 kÙ 0.5 6 dB VCB=6 V, IC=0.1 mA, f=1 kHz,Rg=10 kÙ 0.2 3 dB hFE Classification Marking CBG CBL Rank GR BL hFE 200 400 350 700 www.kexin.com.cn 1