KEXIN 2SC3324

Transistors
SMD Type
Silicon NPN Epitaxial
2SC3324
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
High voltageVCEO=120V
0.4
3
1
Low noise.
0.55
High hFE.hFE=200 to 700
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Small package.
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = 120 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
ìA
hFE
VCE = 6 V, IC = 2 mA
DC current gain
Collector-emitter saturation voltage
Testconditons
Min
Typ
200
700
VCE (sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
VCE = 6 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
0.3
100
V
MHz
4
pF
VCB=6 V, IC=0.1 mA, f=100 Hz,Rg=10 kÙ
0.5
6
dB
VCB=6 V, IC=0.1 mA, f=1 kHz,Rg=10 kÙ
0.2
3
dB
hFE Classification
Marking
CBG
CBL
Rank
GR
BL
hFE
200 400
350 700
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