Transistors SMD Type Strobe High-Current Switching Applications 2SB1215 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-to-emitter saturation voltage. +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Fast switching time. +0.28 1.50 -0.1 +0.2 9.70 -0.2 High fT. +0.15 0.50 -0.15 Excllent linearity of hFE. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector current (pulse) ICP -6 A 1 W 20 W Collector dissipation PC TC = 25 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1215 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = -100V , IE = 0 -1 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -1 ìA DC current Gain hFE Gain bandwidth product Output capacitance VCE = -5V , IC = -0.5A 70 VCE = -5V , IC = -2A 40 400 fT VCE = -10V , IC = -0.5A 130 MHz Cob VCB = -10V , f = 1MHz 40 pF Collector-emitter saturation voltage VCE(sat) IC = -1.5A , IB = -0.15A -200 -500 mV Base-to-emitter saturation voltage VBE(sat) IC = -1.5A , IB = -0.15A -0.9 -1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -120 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -100 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -6 V Turn-on time ton 100 ns Storage time tstg 800 ns tf 50 ns Fall time hFE Classification 2 Min Rank Q R S T hFE 70 140 100 200 140 280 200 400 www.kexin.com.cn