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by MRF1004MB/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
4.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
• Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
• Internal Input Matching for Broadband Operation
CASE 332A–03, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
20
Vdc
Collector–Base Voltage
VCBO
50
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Continuous
IC
250
mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
7.0
40
Watts
mW/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Symbol
Max
Unit
RθJC
25
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
20
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
50
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
V(BR)CBO
50
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
3.5
—
—
Vdc
ICBO
—
—
0.5
mAdc
hFE
10
—
100
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 75 mAdc, VCE = 5.0 Vdc)
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Cob
—
3.3
5.0
pF
Common–Base Amplifier Power Gain
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz)
GPB
10
11
—
dB
Collector Efficiency
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz)
η
40
45
—
dB
Load Mismatch
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
No Degradation in Power Output
%
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,
,
,
,
,
,
('
C1 — 0.1 µF
C2, C4 — 220 pF Chip Capacitor
C3 — 20 µF, 50 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z6 Distributed Microstrip Elements, See Photomaster
Board Material — 0.031″ Thick Glass Teflon
Figure 1. 1090 MHz Test Circuit
REV 8
2
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TYPICAL CHARACTERISTICS
#"('#('#"*%*62
598
#"('#('#"*%*62
598
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:
:
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8# µ7
#04 !#(' #"*% 3* 62
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Figure 3. Output Power versus Frequency
# #"*%!.
#"('#('#"*%*62
598
3* 62
Figure 2. Output Power versus Input Power
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8# µ7
/ :
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8# µ7
) &(##+ )"' )
) )
8# µ7
#598 * 62
Figure 4. Output Power versus Supply Voltage
/ %$(!+ :
Figure 5. Power Gain versus Frequency
;1
;1
;1
,04
;1
/ :
;1
;1
;1
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;1
;1
;1
;1
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," #598 * 62
f
MHz
Zin
Ohms
ZOL* (Pin = 400 mW pk)
Ohms
ZOL* (Pout = 4.0 W pk)
Ohms
960
1090
1215
5.0 + j17.5
10 + j23
16 + j29.5
23.5 – j26
18.5 – j25
15.5 – j23.5
22.5 – j36
15 – j32.5
11 – j23
ZOL* = Conjugate of the optimum load impedance into which the device
ZOL* = output operates at a given output power, voltage, and frequency.
;1
;1
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;1
Figure 6. Series Equivalent Input/Output Impedance
REV 8
3
TYPICAL CHARACTERISTICS
#598 * 62
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8# 37
/ :
Figure 7. Typical Long Pulse Performance
REV 8
4
PACKAGE DIMENSIONS
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+ "!'%"! !&"! !
F
K
D
H
A
J
C
CASE 332A–03
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 8
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