<^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz SOW, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON Built-in Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications « Characterized for 100 to 500 MHz MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO 33 Vdc VCBO VEBO 60 Vdc 4.0 Vdc Adc Collector Current — Continuous — Peak "c 9.0 12 Total Device Dissipation @ TC = 25°C (1 ) Derate above 25°C PD 250 1.43 Watts W/°C Tstg -65 to +150 °f* Storage Temperature Range CASE 316-01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit Rejc 0.7 °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (1C = 80 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector-Emitter Breakdown Voltage (lc = 80 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, lc = 0) V(BR)EBO 4.0 — — Vdc Collector-Base Breakdown Voltage (lc = 80 mAdc, lc = 0) V(BR)CBO 60 — — Vdc ICBO — — 5.0 mAdc hFE 20 Cob — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 vdc, IE = o> ON CHARACTERISTICS I DC Current Gain (lc = 4.0 Adc, VCE = 5.0 Vdc) 80 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1 .0 MHz) 95 125 PF NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. ELECTRICAL CHARACTERISTICS - continued (TC = 25°c unless otherwise noted.) Symbol Min Typ Common-Emitter Amplifier Power Gain (Vcc = 28Vdc. pout = 80 W, f = 400 MHz) GPE 7.3 Collector Efficiency (Vcc = 28 Vdc, Pout = 80 W, f = 400 MHz) T! 50 Load Mismatch (VCc = 28 Vdc, Pout = 80 W, f = 400 MHz, VSWR = 30:1 All Phase Angles) V Characteristic | Max Unit 9.0 — dB 60 — % FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power 0 + vcc _ 28 Vdc RF OUTPUT C1, C2, C7, C8, C9 — 1.0-20 pF Piston Trimmer (Johanson JMC 5501) C3, C4 — 36 pF ATC 100 mil Chip Capacitor C5, C6 — 43 pF ATC 100 mil Chip Capacitor C10—100pFUNELCO C11, C15 —0.1 (iF Erie Redcap C12, C13 — 680 pFFeedttiru C14 — 1.0 nF 50 V Tantalum L1 — 4 Turns #22 AWG Enameled, 3/16" ID Closewound with Ferroxcube Bead (#56-590-65/46) on Ground End of Coil L2 — Ferroxcube VK200-19/4B Ferrite Choke L3 — 7 Turns #18 AWG, 11/16" Long, Wound on a 100 k£2 2.0 Watt Resistor L4 — 6 Turns #20 AWG Enameled, 3/16" ID Closewound L5 — 4 Turns #22 AWG Enameled, 1/8" ID Closewound Z1 — Microstrip 0.2" W x 1.5" L Z2 — Microstrip 0.17" W x 1.16" L Z3 — Microstrip 0.17" W x 0.63" L R1, R2 —10i22.0 Watt Board — Glass Teflon er = 2.56, t = 0.062" Input/Output Connectors Type N DUT Socket Lead Frame Etched from 80-mil-Thick Copper Figure 1. 400 MHz Test Circuit