Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 dB 80 W, 3.0–200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 35 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 9.0 13.5 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 220 1.26 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.8 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 5.0 mAdc hFE 10 — 80 — Cob — 100 130 pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) GPE 10 13 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) η 55 — — % Load Mismatch (VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) ψ NARROW BAND FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power $ $ $ (. $ $ "'& $ $ '& $ !'&"'& $ $ C1 — 22 pF 100 mil ATC C2, C3 — 24 pF 100 mil ATC C4, C11 — 0.8C–C20 pF JMC #5501 Johanson C5 — 200 pF 100 mil ATC C6 — 240 pF 100 mil ATC C7 — Dipped Mica 1000 pF C8 — 0.1 µF Erie Red Cap C9, C10, C12 — 30 pF 100 mil ATC C13 — 1.0 µF Tantalum $ L1 — 0.8″, #20 Wire L2 — 1.0″, #20 Wire RFC1, RFC4 — 0.15 µH Molded Coil RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B RFC5 — 2.5″, #20 Wire, 1.5 Turns RFC6 — Ferroxcube VK200–19/4B R1 — 10 Ω, 1/2 W R2, R3 — 10 Ω, 1.0 W Figure 1. 150 MHz Test Amplifier REV 7 2 "!! &&$"!)$ . TYPICAL PERFORMANCE CURVES ( ( "8>= !'&"'&"!)$)&&% 0 B B B B B "37 "'& "!)$ )&&% Figure 2. Output Power versus Input Power 0 $#' * B "37 ) ) ) ) ( %'""* (!& (!&% Figure 4. Output Power versus Supply Voltage ) ) ) 0 B ( %'""* (!& (!&% "8>= !'&"'&"!)$)&&% "37 ) ) ) ) 0 B ( %'""* (!& (!&% Figure 6. Output Power versus Supply Voltage REV 7 3 Figure 5. Output Power versus Supply Voltage "37 ) 0 B Figure 3. Power Gain versus Frequency "8>= !'&"'&"!)$)&&% "8>= !'&"'&"!)$)&&% "8>= ) ( ( +37 0 B +! 0 B ( ( "8>= ) 0 B +37 !% +! !% 4 4 4 4 4 4 4 4 4 4 4 4 4 4 +! 874>1,=/ 80 =2/ 89=36>6 58,. 369/.,7-/ 37=8 @23-2 =2/ ./?3-/ 8>=9>= 89/;,=/< ,= , 13?/7 8>=9>= 98@/; ?85=,1/ ,7. 0;/:>/7-A Figure 7. Series Equivalent Input–Output Impedance REV 7 4 PACKAGE DIMENSIONS F D R !&% % %!& %&*% K Q L B J C E N H A U CASE 316–01 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 7 5 %&* " &&$ !&!$ &&$ %