MA-COM MRF429

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by MRF429/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
• Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 dB
Efficiency = 45%
150 W (LINEAR), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
• Intermodulation Distortion @ 150 W (PEP) —
IMD = –32 dB (Max)
• Diffused Emitter Resistors for Superior Ruggedness
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
50
Vdc
Collector–Base Voltage
VCBO
100
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
16
Adc
Withstand Current — 10 s
—
20
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
233
1.33
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Symbol
Max
Unit
RθJC
0.75
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
V(BR)CEO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
V(BR)CES
100
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
V(BR)CBO
100
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Characteristic
OFF CHARACTERISTICS
Vdc
(continued)
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
10
30
80
—
Cob
—
220
300
pF
Common–Emitter Amplifier Gain
(VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30; 30.001 MHz)
GPE
13
15
—
dB
Output Power
(VCE = 50 Vdc, f = 30; 30.001 MHz)
Pout
150
—
—
W (PEP)
η
45
—
—
%
IMD
—
–35
–32
dB
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30, 30.001 MHz)
Intermodulation Distortion (1)
(VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc)
ψ
Electrical Ruggedness
(VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz,
VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
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C1, C2, C7 — 1709–9780 pF, Arco 469
C3, C8, C9 — 0.1 µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C5 — 9.09–9180 pF, Arco 463
C6 — 809–9480 pF, Arco 466
C10 — 30 µF, 100 V
R1 — 10 Ω, 10 Watt
R2 — 10 Ω, 1.0 Watt
R3 — 5.0–3.3 Ω 1/2 Watt Carbon Resistors in Parallel
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
L4 — 5 Turns, 1/8″ Copper Tubing, 9/16″ I.D., 3/4″ Long
L5 — 10 Ferrite Beads — Ferroxcube #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
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Figure 6. fT versus Collector Current
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Figure 5. RF Safe Operating Area (SOAR)
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Figure 4. Power Gain versus Frequency
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Figure 3. Output Power versus Supply Voltage
Figure 2. Output Power versus Input Power
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Figure 7. IMD versus Pout
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Figure 8. Output Capacitance versus Frequency
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Figure 9. Output Resistance versus Frequency
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.15
0
0
0
0
0
0
0
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*3 Ω
Figure 10. Series Equivalent Impedance
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PACKAGE DIMENSIONS
A
U
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M
Q
R
B
D
K
J
H
C
E
CASE 211–11
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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