KTA1668 TRANSISTOR (PNP) SOT-89 FEATURES High voltage: VCEO=-60V z z High transistors frequency 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. EMITTER 2. COLLECTOR 1 2 Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-0.1mA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE1 VCE=-2V,IC=-50mA 60 hFE2 VCE=-2V,IC=-1A 30 DC current gain 200 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.7 V Base-emitter saturation voltage VB E(sat) IC=-500mA,IB=-50mA -1.2 V fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking Cob VCE=-10V,IC=-50mA, f=100MHz 150 MHz VCB=-10V,IE=0,f=1MHz 12 pF hFE O Y 60-120 100-200 JO JY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA1668 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA1668 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５