isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1551 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1551 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -5A; VCE= -3V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 90 pF Current-Gain—Bandwidth Product IE= 0.5A; VCE= -5V; ftest= 10MHz 12 MHz fT isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. B 2 1000 MAX UNIT 20000