2SC5345 TRANSISTOR (NPN) FEATURES z RF amplifier High current transition frequency fT=550MHz(Typ.), z [VCE=6V, IE=-1mA] z Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain z z Excellent noise response SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Marking: 5345 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power dissipation 300 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 4 V Collector cut-off current ICBO VCB=30V, IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 μA DC current gain hFE VCE=6V, IC=1mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range JinYu 240 IC=10mA, IB=1mA 0.3 V VCE=6V, IC=1mA 550 MHz VCB=6V, IE=0, f=1MHz 1.4 pF hFE R O Y 40-80 70-140 120-240 １ semiconductor 40 www.htsemi.com 2SC5345 ２ JinYu semiconductor www.htsemi.com