Inchange Semiconductor Product Specification 2SD1459 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High allowable collector dissipation. ・Complement to type 2SB1037 APPLICATIONS ・Color TV vertical output application ・Sound output application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PC Collector power dissipation 2.0 W TC=25℃ 30 Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ Inchange Semiconductor Product Specification 2SD1459 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.5 V VBEsat Base-emitter saturation voltage IC=0.5A, IB=50mA 1.2 V ICBO Collector cut-offcurrent VCB=120V;IE=0 10 μA IEBO Emitter cut-offcurrent VEB=5V;IC=0 10 μA hFE DC current gain IC=0.3A ; VCE=5V Transition frequency IC=0.1A ; VCE=5V fT hFE classifications Q R 70-140 100-200 2 150 UNIT V 70 200 8 MHz Inchange Semiconductor Product Specification 2SD1459 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1459 Silicon NPN Power Transistors 4