ISC 2SB861

Inchange Semiconductor
Product Specification
2SB861
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD1138
APPLICATIONS
・Low frequency power amplifier color
TV vertical deflection output
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-2
A
ICP
Collector current-Peak
-5
A
PC
Collector power dissipation
Ta=25℃
1.8
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
Inchange Semiconductor
Product Specification
2SB861
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
V(BR)EBO
Emitter-base breakdown votage
IE=-5mA; IC=0
Collector-emitter saturation voltage
IC=-0.5 A;IB=-50m A
-3.0
V
VBE
Base-emitter voltage
IC=-50mA ; VCE=-4V
-1.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1
μA
hFE-1
DC current gain
IC=-50mA ; VCE=-4V
60
hFE-2
DC current gain
IC=-0.5A ; VCE=-10V
60
COB
Output capacitance
IE=0 ;VCB=-100V,f=1MHz
VCEsat
‹
CONDITIONS
hFE-1 classifications
B
C
60-120
100-200
2
MIN
TYP.
MAX
UNIT
-150
V
-6
V
200
30
pF
Inchange Semiconductor
Product Specification
2SB861
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SB861
Silicon PNP Power Transistors
4