Inchange Semiconductor Product Specification 2SD1138 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICP Collector current-peak 5 A PC Collector power dissipation Ta=25℃ 1.8 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ Inchange Semiconductor Product Specification 2SD1138 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ V(BR)EBO Emitter-base breakdown votage IE=5mA; IC=0 Collector-emitter saturation voltage IC=0.5 A;IB=50m A 3.0 V VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V ICBO Collector cut-off current VCB=120V; IE=0 1 μA hFE-1 DC current gain IC=50mA ; VCE=4V 60 hFE-2 DC current gain IC=0.5A ; VCE=10V 60 COB Output capacitance IE=0 ;VCB=100V,f=1MHz VCEsat CONDITIONS hFE-1 classifications B C D 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 150 V 6 V 320 20 pF Inchange Semiconductor Product Specification 2SD1138 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1138 Silicon NPN Power Transistors 4