ISC 2SD1138

Inchange Semiconductor
Product Specification
2SD1138
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SB861
APPLICATIONS
·Low frequency high voltage power
amplifier TV vertical deflection output
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
ICP
Collector current-peak
5
A
PC
Collector power dissipation
Ta=25℃
1.8
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
Inchange Semiconductor
Product Specification
2SD1138
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; RBE=∞
V(BR)EBO
Emitter-base breakdown votage
IE=5mA; IC=0
Collector-emitter saturation voltage
IC=0.5 A;IB=50m A
3.0
V
VBE
Base-emitter voltage
IC=50mA ; VCE=4V
1.0
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1
μA
hFE-1
DC current gain
IC=50mA ; VCE=4V
60
hFE-2
DC current gain
IC=0.5A ; VCE=10V
60
COB
Output capacitance
IE=0 ;VCB=100V,f=1MHz
VCEsat
‹
CONDITIONS
hFE-1 classifications
B
C
D
60-120
100-200
160-320
2
MIN
TYP.
MAX
UNIT
150
V
6
V
320
20
pF
Inchange Semiconductor
Product Specification
2SD1138
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SD1138
Silicon NPN Power Transistors
4