Inchange Semiconductor Product Specification 2SB546A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD401A ・Collector current IC=-2A ・Collector-base voltage VCBO=-200V APPLICATIONS ・For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB546A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-0.5mA; IE=0 -200 V V(BR)EBO Emitter-base breakdown votage IE=-0.5mA; IB=0 -5 V Collector-emitter saturation voltage IC=-500m A;IB=-50m A -1.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE DC current gain IC=-0.4A ; VCE=-10V Transition frequency IC=-0.4A ; VCE=-10V VCEsat fT CONDITIONS hFE classifications M L K 40-80 60-120 100-200 2 MIN TYP. 40 MAX UNIT 240 5 MHz Inchange Semiconductor Product Specification 2SB546A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB546A Silicon PNP Power Transistors 4