Inchange Semiconductor Product Specification 2SC2688 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High breakdown voltage ・High transition frequency APPLICATIONS ・Designed for use in Color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V 0.2 A IC Collector current PC Collector power dissipation Ta=25℃ 1.25 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2688 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT 1.5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 ICBO Collector cut-off current VCB=200V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=10V 40 Transition frequency IC=10mA ; VCE=30V 40 Feedback capacitance IE=0 ; VCB=10V;f=1MHz fT Cre PARAMETER hFE Classifications N M L K 40-80 60-120 100-200 160-250 2 300 V 250 MHz 3.0 pF Inchange Semiconductor Product Specification 2SC2688 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3