ISC 2SC2688

Inchange Semiconductor
Product Specification
2SC2688
Silicon NPN Power Transistors
DESCRIPTION
・With TO-126 package
・High breakdown voltage
・High transition frequency
APPLICATIONS
・Designed for use in Color TV chroma
output circuits.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
0.2
A
IC
Collector current
PC
Collector power dissipation
Ta=25℃
1.25
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2688
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
1.5
V
VCEsat
Collector-emitter saturation voltage
IC=50mA; IB=5mA
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; IB=0
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
μA
hFE
DC current gain
IC=10mA ; VCE=10V
40
Transition frequency
IC=10mA ; VCE=30V
40
Feedback capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Cre
‹
PARAMETER
hFE Classifications
N
M
L
K
40-80
60-120
100-200
160-250
2
300
V
250
MHz
3.0
pF
Inchange Semiconductor
Product Specification
2SC2688
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3