2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES z Small Flat Package z High Current Application z High Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-5V, IC=-100mA VCE(sat) IC=-500mA,IB=-50mA VBE VCE=-5V, IC=-500mA -1 V VCB=-10V,IE=0, f=1MHz 30 pF Collector-emitter saturation voltage Base-emitter voltage Cob Collector output capacitance fT Transition frequency VCE=-5V,IC=-0.1A, f=30MHz 80 240 -1 120 V MHz CLASSIFICATION OF hFE RANK O Y RANGE 80–160 120–240 MARKING DO. DY. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５