VISHAY SI2312DS-T1

Si2312DS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
ID (A)
0.033 @ VGS = 4.5 V
4.9
0.040 @ VGS = 2.5 V
4.4
0.051 @ VGS = 1.8 V
3.9
TO-236
(SOT-23)
G
1
3
S
D
Ordering Information: Si2312DS-T1
2
Top View
Si2312DS (C2)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain
TA= 25_C
TA= 70_C
Currentb
ID
Avalanche Currentb
L = 0.1
0 1 mH
Single Avalanche Energy
Continuous Source Current (Diode
Conduction)a
3.77
3.9
3.0
Power Dissipationa
15
IAS
15
EAS
11.25
IS
TA= 25_C
TA= 70_C
Operating Junction and Storage Temperature Range
PD
V
4.9
IDM
A
mJ
1.0
A
1.25
0.75
0.80
0.48
TJ, Tstg
Unit
-55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71338
S-31990—Rev. D, 13-Oct-03
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1
Si2312DS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
0.65
0.85
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
VGS(th)
VDS = VGS, ID = 250 mA
0.45
IGSS
VDS = 0 V, VGS = "8 V
"100
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 70_C
75
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
VDS w 10 V, VGS = 4.5 V
rDS(on)
Forward Transconductancea
Diode Forward Voltage
15
V
nA
mA
A
VGS = 4.5 V, ID = 5.0 A
0.027
0.033
VGS = 2.5 V, ID = 4.5 A
0.033
0.040
VGS = 1.8 V, ID = 4.0 A
0.042
0.051
gfs
VDS = 15 V, ID = 5.0 A
40
VSD
IS = 1.0 A, VGS = 0 V
0.8
1.2
11.2
14.0
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.2
td(on)
15
25
tr
40
60
48
70
31
45
13
25
1.4
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDD = 10 V, RL = 10 W
ID ^ 1.0 A, VGEN = 4.5 V, RG = 6 W
td(off)
Fall-Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 1.0 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
VGS = 4.5 thru 2.0 V
12
I D - Drain Current (A)
I D - Drain Current (A)
12
1.5 V
9
6
3
0.5 V
1
2
3
VDS - Drain-to-Source Voltage (V)
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2
6
TC = 125_C
3
25_C
1.0 V
0
0
9
4
0
0.0
0.5
-55_C
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Document Number: 71338
S-31990—Rev. D, 13-Oct-03
Si2312DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1500
0.12
0.09
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
0.15
VGS = 1.8 V
VGS = 2.5 V
0.06
0.03
0.00
3
6
9
12
Ciss
900
600
300
VGS = 4.5 V
0
1200
Coss
0
15
0
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
8
1.6
VDS = 10 V
ID = 5.0 A
r DS(on) - On-Resistance ( W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
Crss
6
4
2
VGS = 4.5 V
ID = 5.0 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
0.6
-50
20
Qg - Total Gate Charge (nC)
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
20
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
10
TJ = 150_C
1
TJ = 25_C
0.1
0.01
0.0
ID = 5.0 A
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Document Number: 71338
S-31990—Rev. D, 13-Oct-03
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
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Si2312DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
12
0.1
10
ID = 250 mA
-0.0
Power (W)
V GS(th) Variance (V)
Threshold Voltage
0.2
-0.1
8
-0.2
4
-0.3
2
-0.4
-50
TA = 25_C
6
0
-25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
600
Time (sec)
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 166_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 - 4
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4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71338
S-31990—Rev. D, 13-Oct-03