Si7370DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 15.8 0.013 @ VGS = 6 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS D Primary Side Switch for 24-V DC/DC Applications D Secondary Synchronous Rectifier PowerPAK SO-8 D S 6.15 mm 1 2 5.15 mm S 3 S 4 G G D 8 7 D 6 D 5 D S N-Channel MOSFET Bottom View Ordering Information: Si7370DP-T1 Si7370DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Continuous Source Current ID IS Pulsed Drain Current 9.6 12.6 7.7 4.7 1.7 IAS 50 Single Avalanche Energy EAS 125 Maximum Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range PD A 50 Avalanche Current TA = 25_C V 15.8 IDM Unit mJ 5.2 1.9 3.3 1.25 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 19 24 52 65 1.5 1.8 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71874 S-41262—Rev. D, 05-Jul-04 www.vishay.com 1 Si7370DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS Typ Max Unit 4.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea A VGS = 10 V, ID = 12 A 0.009 0.011 VGS = 6.0 V, ID = 10 A 0.0105 0.013 gfs VDS = 15 V, ID = 10 A 50 VSD IS = 3.0 A, VGS = 0 V 0.75 1.2 46 57 VDS = 30 V, VGS = 10 V, ID = 12 A 11.5 Forward Transconductancea Diode Forward 50 VDS w 5 V, VGS = 10 V rDS(on) DS( ) Voltagea mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 11.5 0.2 0.85 1.2 16 25 12 18 50 75 30 45 40 60 td(on) Rise Time tr Turn-Off Delay Time VDD = 30 V, RL = 30 W ID ^ 1.0 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 3.0 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 2, 3 V 20 TC = 125_C 10 25_C 4V 0 −55_ C 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 30 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 71874 S-41262—Rev. D, 05-Jul-04 Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 4000 3500 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.020 0.015 VGS = 6 V VGS = 10 V 0.010 0.005 Ciss 3000 2500 2000 1500 1000 Crss Coss 500 0.000 0 0 10 20 30 40 50 0 15 ID − Drain Current (A) 45 60 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 2.1 10 VDS = 30 V ID = 5 A VGS = 10 V ID = 5 A 1.8 8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 30 6 4 1.5 1.2 0.9 0.6 2 0.3 0 0 10 20 30 40 0.0 −50 50 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 175 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 50 TJ − Junction Temperature (_C) 100 TJ = 150_C 10 TJ = 25_C 1 0.0 25 0.08 ID = 5 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71874 S-41262—Rev. D, 05-Jul-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 1.0 100 80 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.6 −0.2 60 40 −0.6 20 −1.0 −1.4 −50 0 −25 0 25 50 75 100 125 150 175 10 1 Time (sec) Safe Operating Area 100 10 I D − Drain Current (A) 0.1 0.01 0.001 TJ − Temperature (_C) 10 ms Limited by rDS(on) 100 ms 1 ms 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s 100 s, dc 0.01 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 58_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71874 S-41262—Rev. D, 05-Jul-04 Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 71874 S-41262—Rev. D, 05-Jul-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5