VISHAY SI4955DY

Si4955DY
Vishay Siliconix
New Product
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)
0.054 @ VGS = −10 V
−5.0
D TrenchFETr Power MOSFETs
D Low Gate Drive (2.5 V) Capability For
Channel 2
0.100 @ VGS = −4.5 V
−3.7
APPLICATIONS
0.027 @ VGS = −4.5 V
−7.0
0.035 @ VGS = −2.5 V
−6.2
D Game Station
− Load Switch
0.048 @ VGS = −1.8 V
−5.2
VDS (V)
Channel-1
−30
Channel-2
−20
S1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
G2
G1
Top View
Ordering Information: Si4955DY—E3
Si4955DY-T1—E3 (with Tape and Reel)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Parameter
Symbol
10 secs
Channel-2
Steady State
10 secs
Steady State
Drain-Source Voltage
VDS
−30
−20
Gate-Source Voltage
VGS
"20
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
IS
PD
V
−5.0
−3.8
−7.0
−5.3
−4.0
−3.0
−5.6
−4.2
IDM
−20
−1.7
−0.9
−1.7
−0.9
2.0
1.1
2
1.1
1.3
0.7
1.3
0.7
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Channel-2
Typ
Max
Typ
Max
55
62.5
58
62.5
90
110
91
110
33
40
34
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
Si4955DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body
Zero Gate Voltage Drain Current
On State Drain Currenta
On-State
Drain Source On-State
Drain-Source
On State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
IGSS
IDSS
ID(on)
D( )
rDS(on)
gfs
f
VSD
VDS = VGS, ID = −250 mA
Ch 1
−1.0
−3
VDS = VGS, ID = −250 mA
Ch 2
−0.4
−1
VDS = 0 V, VGS = "20 V
Ch 1
"100
VDS = 0 V, VGS = "8 V
Ch 2
"100
VDS = −24 V, VGS = 0 V
Ch 1
−1
VDS = −16 V, VGS = 0 V
Ch 2
−1
VDS = −24 V, VGS = 0 V, TJ = 85_C
Ch 1
−5
VDS = −16 V, VGS = 0 V, TJ = 85_C
Ch 2
VDS w −5 V, VGS = −10 V
Ch 1
−20
VDS p −5 V, VGS = −10 V
Ch 2
−20
V
nA
mA
−5
A
VGS = −10 V, ID = −5.0 A
Ch 1
0.044
0.054
VGS = −4.5 V, ID = −7.0 A
Ch 2
0.022
0.027
VGS = −4.5 V, ID = −3.7 A
Ch 1
0.082
0.100
VGS = −2.5 V, ID = −6.2 A
Ch 2
0.029
0.035
0.048
VGS = −1.8 V, ID = −3 A
Ch 2
0.039
VDS = −15 V, ID = −5.0 A
Ch 1
10
VDS = −15 V, ID = −3 A
Ch 2
25
IS = −1.7 A, VGS = 0 V
Ch 1
−0.80
−1.2
IS = −1.7 A, VGS = 0 V
Ch 2
−0.80
−1.2
Ch 1
12.5
19
Ch 2
21
25
Ch 1
2.1
Ch 2
2.6
Ch 1
3.5
Ch 2
6.0
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate Source Charge
Gate-Source
Qgs
Gate Drain Charge
Gate-Drain
Qgdd
Turn On Delay Time
Turn-On
Rise Time
Turn Off Delay Time
Turn-Off
Fall Time
Source-Drain
Reverse Recovery Time
Channel-1
VDS = −15 V, VGS = −10 V, ID = −5.0 A
Channel-2
VDS = −10
10 V
V, VGS = −4.5
45V
V, ID = −7
7A
nC
Ch 1
7
15
Ch 2
20
30
tr
Channel-1
VDD = −15 V, RL = −15 W
ID ^ −1 A, VGEN = −10 V, RG = 6 W
Ch 1
10
15
Ch 2
40
60
td(off)
d( ff)
Channel-2
VDD = −10
10 V,
V RL = 10 W
ID ^ −1
1 A, VGEN = −4.5
4.5 V, RG = 6 W
Ch 1
30
45
Ch 2
125
190
Ch 1
22
35
td(on)
d( )
tf
trr
Ch 2
85
130
IF = −1.7 A, di/dt = 100 A/ms
Ch 1
25
60
IF = −1.7 A, di/dt = 100 A/ms
Ch 2
64
90
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
CHANNEL 1
Transfer Characteristics
20
20
VGS = 10 thru 5 V
16
I D − Drain Current (A)
I D − Drain Current (A)
16
12
4V
8
12
8
TC = 125_C
4
4
25_C
3V
−55_C
0
0
0
1
2
3
4
5
0
6
1
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3
4
5
Capacitance
1000
0.16
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.20
2
VGS − Gate-to-Source Voltage (V)
0.12
VGS = 4.5 V
0.08
VGS = 10 V
800
Ciss
600
400
Coss
0.04
200
0.00
0
Crss
0
4
8
12
16
20
0
6
ID − Drain Current (A)
18
24
30
VDS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
VDS = 15 V
ID = 5.0 V
8
r DS(on) − On-Resistance (W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
12
6
4
2
1.4
VGS = 10 V
ID = 5.0 V
1.2
1.0
0.8
0
0
2
4
6
8
10
Qg − Total Gate Charge (nC)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
12
14
0.6
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
www.vishay.com
3
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
30
10
TJ = 25_C
1
0.0
0.16
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
TJ = 150_C
ID = 2 A
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
VSD − Source-to-Drain Voltage (V)
4
6
8
10
VGS − Gate-to-Source Voltage (V)
Threshold Voltage
0.6
Single Pulse Power
30
0.4
25
ID = 250 mA
0.2
20
Power (W)
V GS(th) Variance (V)
ID = 5 A
0.12
0.0
15
10
−0.2
5
−0.4
−50
−25
0
25
50
75
100
125
0
10−3
150
10−2
10−1
TJ − Temperature (_C)
1
10
100
600
Time (sec)
Safe Operating Area
100
IDM Limited
rDS(on) Limited
I D − Drain Current (A)
P(t) = 0.0001
10
P(t) = 0.001
ID(on)
Limited
1
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
TA = 25_C
Single Pulse
P(t) = 10
BVDSS Limited
dc
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
www.vishay.com
4
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
Normalized Effective Transient
Thermal Impedance
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
10−1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
16
I D − Drain Current (A)
I D − Drain Current (A)
Transfer Characteristics
20
VGS = 5 thru 2 V
16
CHANNEL 2
12
1.5 V
8
4
12
8
TC = 125_C
4
25_C
1V
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
5
0
0.0
0.4
0.8
−55_C
1.2
1.6
2.0
VGS − Gate-to-Source Voltage (V)
www.vishay.com
5
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
On-Resistance vs. Drain Current
Capacitance
3000
2500
0.08
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.10
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
0.02
Ciss
2000
1500
1000
Coss
500
VGS = 4.5 V
Crss
0.00
0
0
4
8
12
16
20
0
4
ID − Drain Current (A)
Gate Charge
20
On-Resistance vs. Junction Temperature
VDS = 10 V
ID = 7 A
r DS(on) − On-Resistance (W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
16
1.6
4
3
2
1
VGS = 4.5 V
ID = 7 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
20
0.6
−50
24
−25
0
Qg − Total Gate Charge (nC)
10
0.08
r DS(on) − On-Resistance ( W )
20
TJ = 150_C
TJ = 25_C
75
100
125
150
ID = 7 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
www.vishay.com
50
On-Resistance vs. Gate-to-Source Voltage
0.10
1
0.0
25
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
I S − Source Current (A)
12
VDS − Drain-to-Source Voltage (V)
5
6
8
1.2
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Single Pulse Power
30
0.3
25
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
Threshold Voltage
0.4
0.1
20
15
0.0
10
−0.1
5
−0.2
−50
−25
0
25
50
75
100
125
0
10−3
150
10−2
10−1
1
10
100
600
Time (sec)
TJ − Temperature (_C)
Safe Operating Area
100
IDM Limited
I D − Drain Current (A)
rDS(on) Limited
P(t) = 0.0001
10
P(t) = 0.001
ID(on)
Limited
1
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
TA = 25_C
Single Pulse
P(t) = 10
BVDSS Limited
dc
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 91_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
www.vishay.com
7
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
www.vishay.com
8
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72241
S-32411—Rev. B, 24-Nov-03