Si3590DV New Product Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3 0.120 @ VGS = 2.5 V 2 0.170 @ VGS = -4.5 V -2 0.300 @ VGS = -2.5 V -1.2 D TrenchFETr Power MOSFET D Ultra Low rDS(on) N- and P-Channel for High Efficiency D Optimized for High-Side/Low-Side D Minimized Conduction Losses APPLICATIONS D Portable Devices Including PDAs, Cellular Phones and Pagers D1 S2 TSOP-6 Top View G1 1 D1 6 G2 3 mm S2 2 5 S1 G2 3 4 D2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 10 secs P-Channel Steady State 10 secs Steady State Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS "12 "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 3 2.5 -2 -1.7 2.3 2.0 -1.6 -1.3 IDM 8 A -8 1.05 0.75 -1.05 -0.75 1.15 0.83 1.15 0.83 0.70 0.53 0.70 0.53 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF P-Channel Typ Max Typ Max 93 110 93 110 130 150 130 150 75 90 75 90 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72032 S-21979—Rev. A, 04-Nov-02 www.vishay.com 1 Si3590DV New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.6 1.5 VDS = VGS, ID = -250 mA P-Ch -0.6 -1.5 VDS = 0 V, VGS = "12 " V V N-Ch "100 P-Ch "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = -24 V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = -24 V, VGS = 0 V, TJ = 55_C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 5 VDS p -5 V, VGS = -4.5 V P-Ch -5 nA m mA -5 A VGS = 4.5 V, ID = 3 A N-Ch 0.062 0.077 VGS = -4.5 V, ID = -2 A P-Ch 0.135 0.170 VGS = 2.5 V, ID = 2 A N-Ch 0.095 0.120 VGS = -2.5 V, ID = -1.2 A P-Ch 0.235 0.300 VDS = 5 V, ID = 3 A N-Ch 10 VDS = -5 V, ID = -2 A P-Ch 5 IS = 1.05 A, VGS = 0 V N-Ch 0.80 1.10 IS = -1.05 A, VGS = 0 V P-Ch -0.83 -1.10 N-Ch 3 4.5 6 W S V Dynamicb Total Gate Charge Qg P-Ch 3.8 N-Ch 0.6 P-Ch 0.6 N-Ch 1.0 P-Ch 1.5 N-Ch 5 P-Ch 5 8 N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 12 23 P-Ch 15 23 P-Channel VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W N-Ch 13 23 P-Ch 20 30 N-Ch 7 12 P-Ch 20 30 IF = 1.05 A, di/dt = 100 A/ms N-Ch 15 25 IF = -1.05 A, di/dt = 100 A/ms P-Ch 18 30 N-Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC P-Channel VDS = -15 V, VGS = -4.5 V, ID = -2 A 8 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72032 S-21979—Rev. A, 04-Nov-02 Si3590DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 8 8 7 VGS = 5 thru 2.5 V 6 I D - Drain Current (A) I D - Drain Current (A) 7 5 4 3 2V 2 6 5 4 3 TC = 125_C 2 1 25_C 1 -55 _C 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 Capacitance 0.5 450 0.4 360 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 2.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.3 0.2 Ciss 270 180 VGS = 2.5 V 0.1 90 Coss VGS = 4.5 V 0.0 Crss 0 0 2 4 6 8 10 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 6 1.8 VDS = 15 V ID = 2 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 4 3 2 1 VGS = 4.5 V ID = 3 A 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 72032 S-21979—Rev. A, 04-Nov-02 4 5 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si3590DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.25 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.20 ID = 3 A 0.15 0.10 0.05 0.00 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 8 ID = 250 mA 6 Power (W) V GS(th) Variance (V) 0.2 -0.0 -0.2 4 2 -0.4 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (_C) 1 10 30 Time (sec) Safe Operating Area, Junction-to-Case 100 IDM Limited I D - Drain Current (A) 10 rDS(on) Limited 100 ms 1 1 ms ID(on) Limited 0.1 10 ms 10 s, 1 s dc BVDSS Limited 0.01 0.1 100 ms TC = 25_C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72032 S-21979—Rev. A, 04-Nov-02 Si3590DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 72032 S-21979—Rev. A, 04-Nov-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si3590DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics Transfer Characteristics 8 8 VGS = 5 thru 3.5 V 7 TC = -55_C 7 25_C I D - Drain Current (A) I D - Drain Current (A) 3V 6 5 4 2.5 V 3 2 6 5 125_C 4 3 2 2V 1 1 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.75 500 0.60 400 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 0.45 VGS = 2.5 V 0.30 VGS = 4.5 V Ciss 300 200 0.15 100 0.00 0 Coss Crss 0 1 2 3 4 5 6 7 8 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 6 1.8 VDS = 15 V ID = 2 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4 3 2 1 VGS = 4.5 V ID = 2 A 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) www.vishay.com 6 12 4 5 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72032 S-21979—Rev. A, 04-Nov-02 Si3590DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 0.4 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.3 ID = 2 A 0.2 0.1 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 8 ID = 250 mA 0.3 Power (W) V GS(th) Variance (V) 6 0.2 0.1 4 0.0 2 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (_C) 1 10 30 Time (sec) Safe Operating Area, Junction-to-Case 100 IDM Limited I D - Drain Current (A) 10 rDS(on) Limited 100 ms 1 1 ms ID(on) Limited 0.1 10 ms 100 ms 10 s, 1 s TC = 25_C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 72032 S-21979—Rev. A, 04-Nov-02 www.vishay.com 7 Si3590DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 www.vishay.com 8 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72032 S-21979—Rev. A, 04-Nov-02