Si1553DL Vishay Siliconix Complementary 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = -4.5 V "0.44 1.800 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code RA XX YY S1 Lot Traceability and Date Code Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Current ID 5 secs Steady State IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD 5 secs 20 Steady State Unit -20 V "12 "0.70 "0.66 "0.44 "0.41 "0.50 "0.48 "0.31 "0.30 A "1.0 IDM Continuous Source Current (Diode Conduction)a P-Channel 0.25 0.23 -0.25 -0.23 0.30 0.27 0.30 0.27 0.16 0.14 0.16 0.14 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71078 S-21374—Rev. D, 12-Aug-02 www.vishay.com 2-1 Si1553DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.6 VDS = VGS, ID = -250 mA P-Ch -0.6 VDS = 0 V, VGS = "12 " V V N-Ch "100 P-Ch "100 VDS = 16 V, VGS = 0 V N-Ch 1 VDS = -16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 5 VDS = -16 V, VGS = 0 V, TJ = 85_C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 1.0 VDS p -5 V, VGS = -4.5 V P-Ch -1.0 nA m mA -5 A VGS = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385 VGS = -4.5 V, ID = -0.41 A P-Ch 0.850 0.995 VGS = 2.5 V, ID = 0.40 A N-Ch 0.560 0.630 VGS = -2.5 V, ID = -0.25 A P-Ch 1.4 1.800 VDS = 10 V, ID = 0.66 A N-Ch 1.5 VDS = -10 V, ID = -0.41 A P-Ch 0.8 IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.23 A, VGS = 0 V P-Ch -0.8 -1.2 N-Ch 0.8 1.2 1.8 W S V Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr P-Ch 1.2 N-Ch 0.06 P-Ch 0.45 N-Ch 0.30 P-Ch 0.25 nC P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.41 A N-Ch 10 20 P-Ch 7.5 15 N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W N-Ch 16 30 P-Ch 20 40 P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W N-Ch 10 20 P-Ch 8.5 17 N-Ch 10 20 P-Ch 12 24 IF = 0.23 A, di/dt = 100 A/ms N-Ch 20 40 IF = -0.23 A, di/dt = 100 A/ms P-Ch 25 40 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 1.0 1.0 VGS = 5 thru 2.5 V 0.8 2V I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 0.4 0.2 0.6 0.4 TC = 125_C 0.2 1.5 V 25_C -55 _C 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 Capacitance 100 0.8 80 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current VGS = 2.5 V 0.4 2.0 VGS - Gate-to-Source Voltage (V) 1.0 0.6 1.5 VGS = 4.5 V 0.2 Ciss 60 40 Coss 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 ID - Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 0.66 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 5 4 3 2 1 0 0.0 8 VGS = 4.5 V ID = 0.66 A 1.4 1.2 1.0 0.8 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Document Number: 71078 S-21374—Rev. D, 12-Aug-02 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 1 TJ = 150_C TJ = 25_C 0.8 ID = 0.66 A 0.6 0.4 0.2 0.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 Threshold Voltage 4 5 Single Pulse Power 0.2 5 0.1 4 ID = 250 mA -0.0 Power (W) V GS(th) Variance (V) 3 VGS - Gate-to-Source Voltage (V) -0.1 3 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =400_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 www.vishay.com 2-4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics Transfer Characteristics 1.0 1.0 VGS = 5 thru 3 V 0.8 2.5 V I D - Drain Current (A) I D - Drain Current (A) 0.8 TC = -55_C 0.6 0.4 2V 0.2 0.6 125_C 0.4 0.2 1V 0.0 0.0 25_C 0.5 1.0 1.5 V 1.5 2.0 2.5 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 3.0 100 2.5 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 2.0 VGS = 2.5 V 1.5 VGS = 3.6 V 1.0 VGS = 4.5 V 80 Ciss 60 40 Coss 20 0.5 Crss 0.0 0.0 0 0.2 0.4 0.6 ID - Drain Current (A) Document Number: 71078 S-21374—Rev. D, 12-Aug-02 0.8 1.0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 0.41 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0.0 VGS = 4.5 V ID = 0.41 A 1.4 1.2 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 0.6 -50 1.4 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 1 TJ = 150_C TJ = 25_C 2.5 2.0 ID = 0.41 A 1.5 1.0 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) Threshold Voltage 4 5 5 0.3 4 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 3 Single Pulse Power 0.4 0.1 3 2 0.0 1 -0.1 -0.2 -50 -25 0 25 50 75 TJ - Temperature (_C) www.vishay.com 2-6 2 VGS - Gate-to-Source Voltage (V) 100 125 150 0 10- 3 10- 2 10- 1 1 10 100 600 Time (sec) Document Number: 71078 S-21374—Rev. D, 12-Aug-02 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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