Si4505DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 7.8 0.027 @ VGS = 4.5 V 6.4 0.042 @ VGS = –4.5 V –5.0 0.060 @ VGS = –2.5 V –4.0 D TrenchFETr Power MOSFET APPLICATIONS D Level Shift D Load Switch D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 D2 S1 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 10 sec. P-Channel Steady State 10 sec. Steady State Drain-Source Voltage VDS 30 –8 Gate-Source Voltage VGS "20 "8 Continuous Drain Current (TJ = 150_C) _ a, b TA = 25_C TA = 70_C Pulsed Drain Current ID 7.8 6.0 –5.0 6.0 5.2 –3.6 IDM Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V –3.8 –3.0 30 A –30 1.8 1.0 –1.8 2 1.20 2 1.2 1.3 0.75 1.3 0.75 TJ, Tstg Unit 1.0 W _C –55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJF P- Channel Typ Max Typ Max 50 62.5 50 62.5 85 105 85 105 30 40 30 40 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 71826 S-20829—Rev. A, 17-Jun-02 www.vishay.com 1 Si4505DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.8 1.8 VDS = VGS, ID = –250 mA P-Ch –0.45 1.0 VDS = 0 V, VGS = "20 V N-Ch "100 VDS = 0 V, VGS = "8 V P-Ch "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = –6.4 V, VGS = 0 V P-Ch –1 VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = –6.4 V, VGS = 0 V, TJ = 55_C P-Ch VDS = 5 V, VGS = 10 V N-Ch 20 VDS = –5 V, VGS = –4.5 V P-Ch –20 VGS = 10 V, ID = 7.8 A N-Ch 0.015 0.018 VGS = –4.5 V, ID = –5.0 A P-Ch 0.030 0.042 VGS = 4.5 V, ID = 6.4 A N-Ch 0.022 0.027 VGS = –2.5 V, ID = –4.0 A 0.060 V nA m mA –5 A P-Ch 0.048 VDS = 15 V, ID = 7.8 A N-Ch 18 VDS = –15 V, ID = –5.0 A P-Ch 12 IS = 1.8 A, VGS = 0 V N-Ch 0.73 1.1 IS = –1.8 A, VGS = 0 V P-Ch –0.75 –1.1 N-Ch 11.5 20 P-Ch 13.5 20 N-Ch 3 P-Ch 2.2 N-Ch 4 P-Ch 3 N-Ch 15 25 P-Ch 21 40 N-Ch 8 15 P-Ch 45 70 N-Ch 35 55 P-Ch 60 100 N-Ch 10 20 P-Ch 55 85 N-Ch 30 60 P-Ch 50 100 W S V Dynamica Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 7.8 A Gate-Source Charge Qgs P-Channel VDS = –4 V, VGS = –5 V, ID = –5.0 A Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –4 V, RL = 4 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W IF = 1.8 A, di/dt = 100 A/ms m nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 Si4505DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V TC = –55_C 4V 25_C 32 I D – Drain Current (A) I D – Drain Current (A) 32 24 16 3V 8 24 125_C 16 8 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 5 Capacitance On-Resistance vs. Drain Current 2000 0.04 1600 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 4 VGS – Gate-to-Source Voltage (V) 0.05 0.03 VGS = 4.5 V 0.02 3 VGS = 10 V Ciss 1200 800 Coss 0.01 400 0.00 0 Crss 0 6 12 18 24 30 0 6 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 6 1.6 5 VDS = 15 V ID = 7.8 A r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 12 4 3 2 1 0 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 71826 S-20829—Rev. A, 17-Jun-02 12 15 1.4 VGS = 10 V ID = 7.8 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si4505DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 100 TJ = 150_C 10 TJ = 25_C 0.06 ID = 7.8 A 0.04 0.02 0.00 1 0.00 0.08 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD – Source-to-Drain Voltage (V) 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 100 ID = 250 mA 0.2 80 –0.0 Power (W) V GS(th) Variance (V) 4 –0.2 60 40 –0.4 20 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.01 0.001 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area 100 Limited by rDS(on) 1 mS I D – Drain Current (A) 10 1 0.1 10 mS TA = 25_C Single Pulse 100 mS 1S 10 S dc 0.01 0.1 www.vishay.com 4 1 10 VDS – Drain-to-Source Voltage (V) 100 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 Si4505DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si4505DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics 40 Transfer Characteristics 30 VGS = 5 thru 3.5 V TC = –55_C 25_C 24 I D – Drain Current (A) I D – Drain Current (A) 32 3V 24 2.5 V 16 2V 8 125_C 18 12 6 1.5 V 0 0 2 4 6 8 0 0.0 10 0.5 1.0 0.08 1600 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 2000 VGS = 2.5 V VGS = 4.5 V 3.5 Ciss 1200 Coss 800 Crss 0 0 5 10 15 20 25 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 6 1.6 5 VDS = –4 V ID = 5 A r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 3.0 400 0.02 0.00 4 3 2 1 0 0 3 6 9 Qg – Total Gate Charge (nC) www.vishay.com 6 2.5 Capacitance On-Resistance vs. Drain Current 0.10 0.04 2.0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) 0.06 1.5 12 15 1.4 VGS = 4.5 V ID = 5 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 71826 S-20829—Rev. A, 17-Jun-02 Si4505DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 10 TJ = 150_C TJ = 25_C 0.10 ID = 5 A 0.05 0.00 1 0.00 0.15 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 100 ID = 250 mA 0.3 80 0.2 Power (W) V GS(th) Variance (V) 1 0.1 60 40 0.0 20 –0.1 –0.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.001 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area 100 Limited by rDS(on) 1 mS I D – Drain Current (A) 10 10 mS 1 100 mS 0.1 TA = 25_C Single Pulse 1S 10 S dc 0.01 0.1 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 1 VDS – Drain-to-Source Voltage (V) 10 www.vishay.com 7 Si4505DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 8 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71826 S-20829—Rev. A, 17-Jun-02