Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V - 4.1 • TrenchFET® Power MOSFET Pb-free Available RoHS* COMPLIANT S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G2 D G1 Top View Ordering Information: Si4500BDY-T1 Si4500BDY-T1-E3 (Lead (Pb)-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel 10 sec P-Channel Steady State 10 sec Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C)a,b TA = 25 °C TA = 70 °C 9.1 6.6 - 5.3 7.3 5.3 - 4.9 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipationa,b ID TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD V - 3.8 - 3.1 30 - 20 2.1 1.1 - 2.1 - 1.1 2.5 1.3 2.5 1.3 1.6 0.8 1.6 0.8 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF N-Channel P-Channel Typ Max Typ Max 40 50 41 50 75 95 75 95 20 22 23 26 Unit °C/W Notes: a. Surface Mounted on FR4 Board. b. t ≤ 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 1 Si4500BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V IGSS VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb IDSS N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch -5 VDS = 5 V, VGS = 4.5 V N-Ch 30 VDS = - 5 V, VGS = - 4.5 V P-Ch - 20 VGS = 4.5 V, ID = 9.1 A N-Ch 0.016 0.020 VGS = - 4.5 V, ID = - 5.3 A P-Ch 0.048 0.060 VGS = 2.5 V, ID = 3.3 A N-Ch 0.024 0.030 VGS = - 2.5 V, ID = - 1 A P-Ch 0.082 0.100 ID(on) rDS(on) gfs VSD V nA µA A VDS = 15 V, ID = 9.1 A N-Ch 29 VDS = - 15 V, ID = - 5.3 A P-Ch 11 IS = 2.1 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 2.1 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 11 17 P-Ch 6.0 9 N-Ch 2.5 P-Ch 1.3 Ω S V Dynamica Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 3.2 P-Ch 1.6 nC N-Ch 35 50 P-Ch 20 30 N-Ch 50 80 P-Ch 35 60 N-Ch 31 50 P-Ch 55 85 N-Ch 15 30 P-Ch 35 60 IF = 2.1 A, di/dt = 100 A/µs N-Ch 30 60 IF = - 2.1 A, di/dt = 100 A/µs P-Ch 25 50 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 30 30 VGS = 5 thru 3 V 2.5 V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 2V 10 5 20 15 10 TC = 125 °C 5 25 °C 1.5 V - 55 °C 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 1600 0.07 1400 0.06 1200 3.0 Ciss C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 0 0 0.0 0.05 0.04 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 1000 800 600 Coss 400 0.01 200 0.00 0 Crss 0 5 10 15 20 25 30 0 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.6 VDS = 10 V ID = 9.1 A 4 1.4 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 4 3 2 1 VGS = 4.5 V ID = 9.1 A 1.2 1.0 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72281 S-61005-Rev. C, 12-Jun-06 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 30 0.08 TJ = 150 °C r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.07 10 TJ = 25 °C ID = 9.1 A 0.06 0.05 ID = 3.3 A 0.04 0.03 0.02 0.01 0.00 0 0 0.3 0.6 0.9 1.2 1.5 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 80 70 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 60 0.0 - 0.2 50 40 30 20 - 0.4 10 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 600 Time (sec) Threshold Voltage Single Pulse Power 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 dc BVDSS Limited 0.01 0.1 P(t) = 10 TA = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area www.vishay.com 4 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10 - 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 5 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 20 20 VGS = 5 thru 3.5 V TC = - 55 °C 3V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 2.5 V 8 2V 25 °C 125 °C 12 8 4 4 1.5 V 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 0.20 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 700 0.16 VGS = 2.5 V 0.12 0.08 Ciss 600 500 400 300 VGS = 4.5 V Coss 200 0.04 100 Crss 0 0.00 0 4 8 12 16 0 20 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 5.3 A VDS = 10 V ID = 5.3 A 1.4 4 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 3 2 1.2 1.0 0.8 1 0 0 www.vishay.com 6 1 2 3 4 5 6 7 8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.20 20 r DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 0.16 0.12 ID = 1 A ID = 5.3 A 0.08 0.04 0.00 1 0.0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 80 70 0.3 ID = 250 µA Power (W) VGS(th) Variance (V) 60 0.2 0.1 50 40 30 0.0 20 - 0.1 10 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 600 Time (sec) Threshold Voltage Single Pulse Power 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 0.1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 TA = 25 °C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 7 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 75 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72281. www.vishay.com 8 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1