VISHAY SI4500BDY

Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
20
- 20
rDS(on) (Ω)
ID (A)
0.020 at VGS = 4.5 V
9.1
0.030 at VGS = 2.5 V
7.5
0.060 at VGS = - 4.5 V
- 5.3
0.100 at VGS = - 2.5 V
- 4.1
• TrenchFET® Power MOSFET
Pb-free
Available
RoHS*
COMPLIANT
S2
SO-8
S1
1
8
D
G1
2
7
D
S2
3
6
D
G2
4
5
D
G2
D
G1
Top View
Ordering Information: Si4500BDY-T1
Si4500BDY-T1-E3 (Lead (Pb)-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
10 sec
P-Channel
Steady State
10 sec
Steady State
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a,b
TA = 25 °C
TA = 70 °C
9.1
6.6
- 5.3
7.3
5.3
- 4.9
IDM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipationa,b
ID
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
V
- 3.8
- 3.1
30
- 20
2.1
1.1
- 2.1
- 1.1
2.5
1.3
2.5
1.3
1.6
0.8
1.6
0.8
TJ, Tstg
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 sec
Steady State
Steady State
RthJA
RthJF
N-Channel
P-Channel
Typ
Max
Typ
Max
40
50
41
50
75
95
75
95
20
22
23
26
Unit
°C/W
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
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Si4500BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.5
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
- 1.5
VDS = 0 V, VGS = ± 12 V
IGSS
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
IDSS
N-Ch
± 100
P-Ch
± 100
N-Ch
1
VDS = - 20 V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
-5
VDS = 5 V, VGS = 4.5 V
N-Ch
30
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 20
VGS = 4.5 V, ID = 9.1 A
N-Ch
0.016
0.020
VGS = - 4.5 V, ID = - 5.3 A
P-Ch
0.048
0.060
VGS = 2.5 V, ID = 3.3 A
N-Ch
0.024
0.030
VGS = - 2.5 V, ID = - 1 A
P-Ch
0.082
0.100
ID(on)
rDS(on)
gfs
VSD
V
nA
µA
A
VDS = 15 V, ID = 9.1 A
N-Ch
29
VDS = - 15 V, ID = - 5.3 A
P-Ch
11
IS = 2.1 A, VGS = 0 V
N-Ch
0.8
1.2
IS = - 2.1 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
N-Ch
11
17
P-Ch
6.0
9
N-Ch
2.5
P-Ch
1.3
Ω
S
V
Dynamica
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.1 A
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
N-Ch
3.2
P-Ch
1.6
nC
N-Ch
35
50
P-Ch
20
30
N-Ch
50
80
P-Ch
35
60
N-Ch
31
50
P-Ch
55
85
N-Ch
15
30
P-Ch
35
60
IF = 2.1 A, di/dt = 100 A/µs
N-Ch
30
60
IF = - 2.1 A, di/dt = 100 A/µs
P-Ch
25
50
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72281
S-61005-Rev. C, 12-Jun-06
Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless noted
30
30
VGS = 5 thru 3 V
2.5 V
25
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
2V
10
5
20
15
10
TC = 125 °C
5
25 °C
1.5 V
- 55 °C
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
1600
0.07
1400
0.06
1200
3.0
Ciss
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
0
0
0.0
0.05
0.04
0.03
VGS = 2.5 V
0.02
VGS = 4.5 V
1000
800
600
Coss
400
0.01
200
0.00
0
Crss
0
5
10
15
20
25
30
0
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
20
1.6
VDS = 10 V
ID = 9.1 A
4
1.4
rDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
4
3
2
1
VGS = 4.5 V
ID = 9.1 A
1.2
1.0
0.8
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
30
0.08
TJ = 150 °C
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.07
10
TJ = 25 °C
ID = 9.1 A
0.06
0.05
ID = 3.3 A
0.04
0.03
0.02
0.01
0.00
0
0
0.3
0.6
0.9
1.2
1.5
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
80
70
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
60
0.0
- 0.2
50
40
30
20
- 0.4
10
- 0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
600
Time (sec)
Threshold Voltage
Single Pulse Power
100
rDS(on) Limited
IDM Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
dc
BVDSS Limited
0.01
0.1
P(t) = 10
TA = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
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Document Number: 72281
S-61005-Rev. C, 12-Jun-06
Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10 - 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
www.vishay.com
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Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
20
20
VGS = 5 thru 3.5 V
TC = - 55 °C
3V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
2.5 V
8
2V
25 °C
125 °C
12
8
4
4
1.5 V
0
0.0
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
0.20
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
700
0.16
VGS = 2.5 V
0.12
0.08
Ciss
600
500
400
300
VGS = 4.5 V
Coss
200
0.04
100
Crss
0
0.00
0
4
8
12
16
0
20
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VGS = 4.5 V
ID = 5.3 A
VDS = 10 V
ID = 5.3 A
1.4
4
rDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
12
3
2
1.2
1.0
0.8
1
0
0
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1
2
3
4
5
6
7
8
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
0.20
20
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
0.16
0.12
ID = 1 A
ID = 5.3 A
0.08
0.04
0.00
1
0.0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
80
70
0.3
ID = 250 µA
Power (W)
VGS(th) Variance (V)
60
0.2
0.1
50
40
30
0.0
20
- 0.1
10
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
10
100
600
Time (sec)
Threshold Voltage
Single Pulse Power
100
IDM Limited
rDS(on) Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
0.1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
P(t) = 1
TA = 25 °C
Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
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Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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data, see http://www.vishay.com/ppg?72281.
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Document Number: 72281
S-61005-Rev. C, 12-Jun-06
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Document Number: 91000
Revision: 08-Apr-05
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