Si3588DV New Product Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.080 @ VGS = 4.5 V 3.0 0.100 @ VGS = 2.5 V 2.6 0.128 @ VGS = 1.8 V 2.3 0.145 @ VGS = –4.5 V –2.2 0.200 @ VGS = –2.5 V –1.8 0.300 @ VGS = –1.8 V –1.5 D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G2 3 4 D2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current ID 5 secs Steady State IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 5 secs 20 Steady State Unit –20 V "8 3.0 2.5 2.3 2.0 –2.2 –0.57 –1.8 –1.5 A "8 IDM Continuous Source Current (Diode Conduction)a P-Channel 1.05 0.75 –1.05 –0.75 1.15 0.83 1.15 0.083 0.73 0.53 0.73 0.53 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 93 110 130 150 90 90 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71332 S-02383—Rev. A, 23-Oct-00 www.vishay.com 1 Si3588DV New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.45 VDS = VGS, ID = –250 mA P-Ch –0.45 VDS = 0 V, VGS = "8 V N-Ch "100 VDS = 0 V, VGS = "8 V P-Ch "100 V VDS = 16 V, VGS = 0 V N-Ch 1 VDS = –16 V, VGS = 0 V P-Ch –1 VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 10 VDS = –16 V, VGS = 0 V, TJ = 85_C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 5 VDS p –5 V, VGS = –4.5 V P-Ch –5 nA m mA –10 A VGS = 4.5 V, ID = 3 A N-Ch 0.064 0.080 VGS = –4.5 V, ID = –2.2 A P-Ch 0.115 0.145 VGS = 2.5 V, ID = 2.6 A N-Ch 0.080 0.100 VGS = –2.5 V, ID = –1.8 A P-Ch 0.163 0.200 VGS = 1.8 V, ID = 2.3 A N-Ch 0.104 0.128 VGS = –1.8 V, ID = –1.0 A P-Ch 0.240 0.300 VDS = 5 V, ID = 3 A N-Ch 9 VDS = –5 V, ID = –2.2 A P-Ch 5 IS = 1.05 A, VGS = 0 V N-Ch 0.8 1.1 IS = –1.05 A, VGS = 0 V P-Ch –0.8 –1.1 N-Ch 5 7.5 7.5 W S V Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3 A Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qgs td(on) td(off) P-Ch 1.0 N-Ch 0.9 P-Ch 0.9 N-Ch 12 20 P-Ch 12 20 N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W N-Ch 30 50 P-Ch 29 50 P-Channel VDD = –4 V, RL = 8 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch 28 50 P-Ch 24 45 N-Ch 12 20 P-Ch 30 50 IF = 1.05 A, di/dt = 100 A/ms N-Ch 20 40 IF = –1.05 A, di/dt = 100 A/ms P-Ch 20 40 tf trr 5 0.65 nC P-Channel VDS = –10 V, VGS = –4.5 V, ID = –2.2 A Qgd tr P-Ch N-Ch ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71332 S-02383—Rev. A, 23-Oct-00 Si3588DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL Output Characteristics Transfer Characteristics 10 8 TC = –55_C VGS = 4.5 thru 2 V 25_C 8 I D – Drain Current (A) I D – Drain Current (A) 6 4 1.5 V 2 0 0 1 2 3 4 6 125_C 4 2 0 0.0 5 0.5 1.0 2.5 Capacitance On-Resistance vs. Drain Current 0.5 600 500 0.4 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 2.0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) 0.3 0.2 VGS = 1.8 V VGS = 2.5 V 0.1 400 Ciss 300 200 Coss 100 VGS = 4.5 V 0.0 Crss 0 0 2 4 6 8 10 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 5 1.8 1.6 VDS = 10 V ID = 3.0 A 4 r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 1 2 3 Qg – Total Gate Charge (nC) Document Number: 71332 S-02383—Rev. A, 23-Oct-00 4 5 VGS = 4.5 V ID = 3.0 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si3588DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 0.25 TJ = 150_C 1 TJ = 25_C 0.20 ID = 3.0 A 0.15 0.10 0.05 0.00 0.1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 0.2 8 ID = 250 mA 0.1 Power (W) V GS(th) Variance (V) 6 –0.0 –0.1 4 –0.2 2 –0.3 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.1 0.01 10 1 TJ – Temperature (_C) 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71332 S-02383—Rev. A, 23-Oct-00 Si3588DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Output Characteristics Transfer Characteristics 10 8 TC = –55_C VGS = 4.5 thru 2.5 V 8 I D – Drain Current (A) I D – Drain Current (A) 6 2V 4 2 1.5 V 0 0 1 2 3 4 25_C 6 125_C 4 2 0 0.0 5 VDS – Drain-to-Source Voltage (V) 0.5 1.0 On-Resistance vs. Drain Current 2.0 2.5 3.0 3.5 Capacitance 0.75 600 500 0.60 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 1.5 VGS – Gate-to-Source Voltage (V) 0.45 VGS = 1.8 V 0.30 VGS = 2.5 V VGS = 4.5 V 0.15 Ciss 400 300 200 Coss Crss 100 0.00 0 0 2 4 ID – Drain Current (A) Document Number: 71332 S-02383—Rev. A, 23-Oct-00 6 8 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) www.vishay.com 5 Si3588DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge VDS = 10 V ID = 2.2 A VGS = 4.5 V ID = 2.2 A 1.6 4 3 2 1 0 0 On-Resistance vs. Junction Temperature 1.8 r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 5 P-CHANNEL 1 2 3 4 1.4 1.2 1.0 0.8 0.6 –50 5 –25 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on)– On-Resistance ( W ) 10 I S – Source Current (A) 0 TJ – Junction Temperature (_C) TJ = 150_C 1 TJ = 25_C 0.4 0.3 ID = 2.2 A 0.2 0.1 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 0.4 8 0.3 Power (W) V GS(th) Variance (V) 6 0.2 ID = 250 mA 0.1 4 0.0 2 –0.1 –0.2 –50 0 –25 0 25 50 75 TJ – Temperature (_C) www.vishay.com 6 100 125 150 0.01 0.1 1 10 30 Time (sec) Document Number: 71332 S-02383—Rev. A, 23-Oct-00 Si3588DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71332 S-02383—Rev. A, 23-Oct-00 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7