ROHM SH8K15

Data Sheet
4V Drive Nch + Nch MOSFET
SH8K15
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8)
(5)
(1)
(4)
 Application
Switching
 Inner circuit
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
○
SH8K15
(8)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Drain current
Source current
(Body Diode)
Continuous
ID
Pulsed
Continuous
IDP
Is
*1
Pulsed
Isp
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
Tch
Tstg
9.0
A
36
1.6
A
A
36
A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
(7)
∗2
(6)
(5)
∗2
∗1
(1)
∗1
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
2.0
W / TOTAL
1.4
W / ELEMENT
150
C
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.05 - Rev.A
Data Sheet
SH8K15
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
Conditions
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS (on)*
-
15
21
ID=9.0A, VGS=10V
-
18
25
m ID=9.0A, VGS=4.5V
-
20
28
Forward transfer admittance
l Yfs l*
5.0
-
-
S
ID=9.0A, VDS=10V
Input capacitance
Ciss
-
630
-
pF
VDS=10V
Output capacitance
Coss
-
230
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
110
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
10
-
ns
ID=4.5A, VDD 15V
tr *
-
33
-
ns
VGS=10V
td(off) *
-
42
-
ns
RL=3.3
Zero gate voltage drain current
Rise time
Turn-off delay time
Fall time
ID=9.0A, VGS=4.0V
tf *
-
10
-
ns
RG=10
Total gate charge
Qg *
-
8.5
-
nC
ID=9A
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
2.3
4.0
-
nC
nC
VDD 15V
VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=9.0A, VGS=0V
*Pulsed
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.05 - Rev.A
Data Sheet
SH8K15
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
9
9
VGS=10.0V
VGS=3.0V
VGS=2.8V
8
VGS=4.5V
8
VGS=4.0V
7
VGS=2.5V
7
6
Drain Current : ID [A]
Drain Current : ID [A]
VGS=10.0V
VGS=4.5V
VGS=4.0V
5
4
3
VGS=2.5V
6
VGS=3.0V
5
VGS=2.8V
4
3
2
2
Ta=25°C
Pulsed
1
Ta=25°C
Pulsed
1
0
0
0
0.2
0.4
0.6
0.8
0
1
2
Drain-Source Voltage : VDS [V]
8
10
1000
1000
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
Pulsed
100
VGS=4.0V
VGS=4.5V
VGS=10V
10
1
0.01
0.1
1
10
100
10
1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=4.5V
pulsed
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
6
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
Drain-Source Voltage : VDS [V]
100
10
1
0.01
0.1
1
10
Drain Current : ID [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
100
10
1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
Drain Current : ID [A]
3/6
2011.05 - Rev.A
Data Sheet
SH8K15
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
100
100
VDS=10V
pulsed
VDS=10V
pulsed
Drain Currnt : ID [A]
Forward Transfer Admittance
Yfs [S]
10
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.1
0.01
0.01
0.001
0.001
0.01
0.1
1
10
100
0.0
0.5
1.0
Drain Current : ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
2.5
3.0
3.5
50
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=0V
pulsed
10
Source Current : Is [A]
2.0
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
Ta=25°C
Pulsed
40
ID=4.5A
ID=9.0A
30
20
10
0
0.01
0.0
0.5
1.0
1.5
0
2.0
2
4
6
8
10
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10000
10
VDD≒15V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
1000
tf
td(off)
100
td(on)
Ta=25°C
VDD=15V
ID=9A
Pulsed
8
Gate-Source Voltage : VGS [V]
Switching Time : t [ns]
1.5
Gate-Source Voltage : VGS [V]
tr
10
6
4
2
0
1
0.01
0.1
1
0
10
Drain Current : ID [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5
10
15
Total Gate Charge : Qg [nC]
4/6
2011.05 - Rev.A
Data Sheet
SH8K15
FIg.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
10000
100
Operation in this area is limited by RDS(on)
(VGS = 10V)
Ta=25°C
f=1MHz
VGS=0V
PW = 100μs
Drain Current : ID [ A ]
Capacitance : C [pF]
10
Ciss
1000
Coss
100
PW = 1ms
1
PW = 10ms
0.1
Crss
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
10
DC Operation
0.01
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage : VDS [ V ]
Drain-Source Voltage : VDS [V]
FIg.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r（t）
10
Ta=25°C
Single Pulse : 1Unit
1
0.1
0.01
0.001
0.0001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=89.3°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.05 - Rev.A
Data Sheet
SH8K15
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.05 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A