ROHM RSQ015P10

Data Sheet
4V Drive Pch MOSFET
RSQ015P10
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
TSMT6
Features
1) Low on-resistance.
2) Low voltage drive(4V).
3) Small surface mount package (TSMT6).
Abbreviated symbol : ZN
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSQ015P10
 Inner circuit
Taping
TR
3000

(6)
(5)
(4)
∗2
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Limits
Unit
100
20
1.5
V
V
A
*1
6.0
1.0
A
A
ISP
*1
PD
*2
6.0
1.25
A
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Rth (ch-a)*
Limits
100
Unit
C / W
Drain-source voltage
VDSS
Gate-source voltage
Continuous
VGSS
ID
Pulsed
Continuous
IDP
IS
Pulsed
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
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1/6
2011.08 - Rev.A
Data Sheet
RSQ015P10
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=20V, VDS=0V
100
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=100V, VGS=0V
VGS (th)
1.0
-
2.5
V
-
350
470
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VDS=10V, ID=1mA
ID=1.5A, VGS=10V
Static drain-source on-state
resistance
*
RDS (on)
-
380
510
-
400
540
Forward transfer admittance
l Yfs l*
1.5
-
-
S
VDS=10V, ID=1.5A
Input capacitance
Ciss
-
950
-
pF
VDS=25V
Output capacitance
Coss
-
45
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
20
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
10
-
ns
VDD 50V, ID=0.75A
Rise time
m ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4.0V
tr *
-
15
-
ns
VGS=10V
td(off)*
-
60
-
ns
RL=66
tf *
-
10
-
ns
RG=10
Total gate charge
Qg *
-
17.0
-
nC
VDD 50V, ID=1.5A
Gate-source charge
Qgs *
Qgd *
4.5
5.0
-
nC
nC
VGS=5V
Gate-drain charge
-
Min.
Typ.
Max.
Unit
-
-
1.2
V
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Conditions
VGS=0V, Is=1.5A
*Pulsed
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2/6
2011.08 - Rev.A
Data Sheet
RSQ015P10
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
1.5
1.5
VGS=-10.0V
VGS=-4.5V
VGS=-4.5V
VGS=-4.0V
Drain Current : -ID [A]
VGS=-4.0V
Drain Current : -ID [A]
Ta=25℃
Pulsed
VGS=-10.0V
VGS=-2.8V
1
0.5
1
VGS=-2.8V
VGS=-2.5V
0.5
VGS=-2.5V
Ta=25℃
Pulsed
0
0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : -VDS [V]
6
8
10
Drain-Source Voltage : -VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
10000
1000
Ta=25℃
Pulsed
VGS=-10V
pulsed
0.1
1
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=-4.0V
VGS=-4.5V
VGS=-10V
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
100
0.01
100
10
0.01
10
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C
1000
Drain Current : -ID [A]
0.1
1
10
Drain Current : -ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
10000
10000
VGS=-4.5V
pulsed
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
1000
100
10
0.01
0.1
1
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C
1000
100
10
0.01
10
Drain Current : -ID [A]
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VGS=-4V
pulsed
0.1
1
10
Drain Current : -ID [A]
3/6
2011.08 - Rev.A
Data Sheet
RSQ015P10
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
10
10
VDS=-10V
pulsed
1
Drain Currnt : -ID [A]
Forward Transfer Admittance
Yfs [S]
VDS=-10V
pulsed
1
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.01
0.001
0.001
0.01
0.1
1
10
0.0
0.5
1.0
Drain Current : -ID [A]
2.0
2.5
3.0
3.5
Gate-Source Voltage : -VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.9 Source Current vs. Source-Drain Voltage
800
10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=0V
pulsed
Source Current : -Is [A]
1.5
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
0.1
Ta=25℃
Pulsed
700
ID=-0.75A
ID=-1.5A
600
500
400
300
200
100
0.01
0.0
0.5
1.0
1.5
0
2.0
2
Source-Drain Voltage : -VSD [V]
6
8
10
Gate-Source Voltage : -VGS [V]
Fig.12 Dynamic Input Characteristics
Fig.11 Switching Characteristics
10000
10
VDD≒-50V
VGS=-10V
RG=10Ω
Ta=25°C
Pulsed
Ta=25°C
VDD=-50V
ID=-1.5A
Pulsed
8
Gate-Source Voltage : -VGS [V]
1000
Switching Time : t [ns]
4
tf
td(off)
100
10
6
4
2
tr
td(on)
1
0
0.01
0.1
1
10
0
Drain Current : -ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
5
10
15
20
25
30
35
Total Gate Charge : -Qg [nC]
4/6
2011.08 - Rev.A
Data Sheet
RSQ015P10
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width
10000
10
Normalized Transient Thermal Resistance : r（t）
Ta=25°C
f=1MHz
VGS=0V
Capacitance : C [pF]
1000
Ciss
100
Coss
10
Crss
1
0.01
0.1
1
10
100
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=100°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
1000
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
Drain-Source Voltage : -VDS [V]
Fig.15 Maximum Safe Operating Area
Operation in this area is limited by RDS(on)
(VGS = -10V)
10
Drain Current : -ID [ A ]
PW = 100μs
1
PW = 1ms
0.1
PW = 10ms
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
DC Operation
0.01
0.1
1
10
100
1000
Drain-Source Voltage : -VDS [ V ]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
Data Sheet
RSQ015P10
 Measurement circuits
Pulse width
ID
VDS
VGS
VGS
10%
50%
90%
50%
RL
10%
D.U.T.
VDD
RG
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
10%
tf
toff
Fig.1-2 Switching Waveforms
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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Fig.2-2 Gate Charge Waveform
6/6
2011.08 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A