SUD50N04-05L Vishay Siliconix New Product N-Channel 40-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 D TrenchFETr Power MOSFETS D 175_C Junction Temperature ID (A)c rDS(on) (W) 0.0054 @ VGS = 10 V 115 APPLICATIONS 0.0069 @ VGS = 4.5 V 102 D Automotive Such As: − High-Side Switch − Motor Drives − Valve Drives D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N04-05L—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175_C) TC = 25_C Pulsed Drain Current 81c IDM Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energya Power Dissipation A 100 IAS 50 EAS 125 PD 136 W TJ, Tstg −55 to 175 _C L = 0.1 0 1 mH TC = 25_C Operating Junction and Storage Temperature Range V 115c ID TC = 100_C Unit mJ THERMAL RESISTANCE RATINGS Parameter JJunction-to-Ambient ti t A bi tb Junction-to-Case Symbol t 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes: a. Duty cycle 1%. b. Surface mounted on 1” FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72786 S-40444—Rev. A, 15-Mar-04 www.vishay.com 1 SUD50N04-05L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 5 V, VGS = 10 V 50 VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) gfs 0.0044 0.0083 0.0130 0.0055 20 nA mA m 0.0054 VGS = 10 V, ID = 20 A, TJ = 175_C VDS = 15 V, ID = 15 A V A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A Forward Transconductancea 3 W 0.0069 80 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 365 Total Gate Chargec Qg 90 Gate-Source Chargec Qgs 5600 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 20 V,, VGS = 10 V,, ID = 50 A 590 pF 135 19 nC Gate-Drain Chargec Qgd 19 Gate Resistance Rg 1.6 td(on) 15 tr VDD = 20 V, RL = 0.4 W 20 30 td(off) ID 50 A, VGEN = 10 V, Rg = 2.5 W 65 100 11 20 Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec tf W 25 ns Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 50 Pulsed Current ISM 100 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/ms 30 45 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72786 S-40444—Rev. A, 15-Mar-04 SUD50N04-05L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 120 VGS = 10 thru 5 V 4V 100 80 I D − Drain Current (A) I D − Drain Current (A) 100 60 40 20 0 2 4 6 8 60 40 TC = 125_C 20 3V 0 80 25_C 0 0.0 10 VDS − Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 −55_C 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.010 TC = −55_C 25_C 120 r DS(on) − On-Resistance ( Ω ) g fs − Transconductance (S) 160 125_C 80 40 0 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0.000 0 10 20 30 40 50 60 0 20 40 Capacitance V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 100 120 Gate Charge 10 7000 6000 80 ID − Drain Current (A) VGS − Gate-to-Source Voltage (V) 8000 60 VDS = 20 V ID = 50 A 8 6 4 2 0 8 16 24 32 VDS − Drain-to-Source Voltage (V) Document Number: 72786 S-40444—Rev. A, 15-Mar-04 40 0 20 40 60 80 100 Qg − Total Gate Charge (nC) www.vishay.com 3 SUD50N04-05L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 20 A TJ = 150_C I S − Source Current (A) 1.7 rDS(on) − On-Resiistance (Normalized) Source-Drain Diode Forward Voltage 100 1.4 1.1 0.8 0.5 −50 −25 0 25 50 75 100 125 150 TJ = 25_C 10 1 175 0.3 TJ − Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 200 125 Limited by rDS(on) 10 ms 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 100 75 50 Limited By Package 25 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 10 50 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) 1 1 ms 10 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72786 S-40444—Rev. A, 15-Mar-04