SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) () ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_Cd Operating Junction and Storage Temperature Range ID Unit V 45a 34a IDM 100 IAR 45 EAR 100 A mJ 88c PD 3.75 W TJ, Tstg - 55 to 175 _C Symbol Limit Unit RthJA 40 RthJC 1.7 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mountd _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71740 S-05010—Rev. G, 05-Nov-01 www.vishay.com 1 SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 A 30 VGS(th) VDS = VGS, IDS = 250 A 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea IDSS ID(on) rDS(on) DS( ) VDS = 30 V, VGS = 0 V, TJ = 125_C 50 VDS = 30 V, VGS = 0 V, TJ = 175_C 150 VDS = 5 V, VGS = 10 V 45 gfs VGS = 10 V, ID = 45 A 0.009 0.013 0.02 VGS = 10 V, ID = 45 A, TJ = 175_C 0.02 0.026 0.0145 0.02 VDS = 15 V, ID = 45 A V nA A VGS = 10 V, ID = 45 A, TJ = 125_C VGS = 4.5 V, ID = 20 A Forward Transconductancea 3 0.013 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 180 Total Gate Chargec Qg 40 Gate-Source Chargec Qgs 2000 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V,, VGS = 10 V,, ID = 45 A 370 pF 70 7.5 nC Gate-Drain Chargec Qgd 8 Turn-On Delay Timec td(on) 11 20 Rise Timec Turn-Off Delay Timec Fall Timec tr VDD = 15 V, RL = 0.33 9 20 td(off) ID ] 45 A, VGEN = 10 V, RG = 2.5 38 70 11 20 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 45 Pulsed Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 45 A, VGS = 0 V 1 1.3 V 35 70 ns IF = 45 A,, di/dt = 100 A/s 1.7 A 0.03 C trr IRM(REC) Qrr Notes: a. Pulse test; pulse width v 300 s, duty cycle v 2%. e. Guaranteed by design, not subject to production testing. b. Independent of operating temperature. www.vishay.com 2 Document Number: 71740 S-05010—Rev. G, 05-Nov-01 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 Transfer Characteristics 100 VGS = 10 thru 6 V 5V 80 I D - Drain Current (A) I D - Drain Current (A) 90 60 4V 30 2V 60 40 TC = 125_C 20 25_C 3V 0 - 55_C 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.05 60 r DS(on) - On-Resistance ( ) g fs - Transconductance (S) TC = - 55_C 25_C 125_C 40 20 0 0.04 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0.00 0 20 40 60 80 0 20 VGS - Gate-to-Source Voltage (V) 60 80 30 40 ID - Drain Current (A) Capacitance Gate Charge 10 2500 V GS - Gate-to-Source Voltage (V) 3000 C - Capacitance (pF) 40 Ciss 2000 1500 1000 Coss 500 Crss 0 0 VDS = 15 V ID = 45 A 8 6 4 2 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Document Number: 71740 S-05010—Rev. G, 05-Nov-01 30 0 10 20 Qg - Total Gate Charge (nC) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 1.7 I S - Source Current (A) r DS(on) - On-Resistance () (Normalized) VGS = 10 V ID = 45 A 1.3 0.9 0.5 - 50 TJ = 150_C TJ = 25_C 10 1 - 25 0 25 50 75 100 125 150 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 200 60 100 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 s Limited by rDS(on) 100 s 10 1 ms 10 ms TC = 25_C Single Pulse 10 100 ms dc 0 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71740 S-05010—Rev. G, 05-Nov-01