HGTG40N60B3 - Fairchild Semiconductor

HGTG40N60B3
Data Sheet
November 2004
70A, 600V, UFS Series N-Channel IGBT
Features
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
• 70A, 600V, TC = 25oC
File Number
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Packaging
JEDEC STYLE TO-247
E
C
Formerly Developmental Type TA49052.
G
Ordering Information
PART NUMBER
HGTG40N60B3
PACKAGE
TO-247
COLLECTOR
(FLANGE)
BRAND
G40N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
HGTG40N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG40N60B3
UNITS
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
70
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
330
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
100A at 600V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
290
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.33
W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
2
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
10
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
S
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = -10mA, VGE = 0V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
ICES
VCE(SAT)
VGE(TH)
20
-
-
V
VCE = BVCES
TC = 25oC
-
-
100
µA
VCE = BVCES
TC = 150oC
-
-
6.0
mA
IC = IC110,
VGE = 15V
TC = 25oC
-
1.4
2.0
V
TC = 150oC
-
1.5
2.3
V
3.0
4.8
6.0
V
-
-
±100
nA
VCE = 480V
200
-
-
A
VCE = 600V
100
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.5
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
250
330
nC
VGE = 20V
-
335
435
nC
-
47
-
ns
-
35
-
ns
-
170
200
ns
-
50
100
ns
-
1050
1200
µJ
-
800
1400
µJ
IC = 250µA, VCE = VGE
IGES
VGE = ±20V
SSOA
TJ = 150oC
RG = 3Ω
VGE = 15V
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 1)
EOFF
©2004 Fairchild Semiconductor Corporation
IGBT and Diode Both at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 100µH
Test Circuit (Figure 17)
HGTG40N60B3 Rev. B3
HGTG40N60B3
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
TEST CONDITIONS
trI
Current Turn-Off Delay Time
TYP
MAX
UNITS
-
47
-
ns
-
35
-
ns
-
285
375
ns
-
100
175
ns
-
1850
-
µJ
IGBT and Diode Both at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 100µH
Test Circuit (Figure 17)
td(ON)I
Current Rise Time
MIN
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 1)
EOFF
-
2000
-
µJ
Thermal Resistance Junction To Case
RθJC
-
-
0.43
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
(Unless Otherwise Specified)
VGE = 15V
80
60
PACKAGE LIMITED
40
20
0
25
50
75
100
125
150
250
TJ = 150oC, RG = 3Ω, VGE = 15V
200
150
100
50
0
0
TC , CASE TEMPERATURE (oC)
VGE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
10
20
40
60
80
100
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
TC
75oC 15V
75oC 10V
110oC 15V
110oC 10V
1
300
400
500
600
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3Ω, L = 100µH, V CE = 480V
10
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
100
900
18
VCE = 360V, RG = 3Ω, TJ = 125oC
800
16
ISC
14
700
600
12
10
500
tSC
8
400
300
6
4
10
11
12
13
14
200
15
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG40N60B3 Rev. B3
HGTG40N60B3
(Unless Otherwise Specified) (Continued)
200
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
150
TC = -55oC
TC = 150oC
100
TC = 25oC
50
0
0
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
200
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
150
TC = -55oC
TC = 150oC
100
TC = 25oC
50
0
0
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 150oC, VGE = 10V
TJ = 150oC, VGE = 15V
8
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
TJ = 25oC, VGE = 10V
12
4
TJ = 25oC, VGE = 15V
0
20
40
60
80
RG = 3Ω, L = 100µH, VCE = 480V
6
TJ = 150oC; VGE = 10V AND 15V
4
2
TJ = 25oC; VGE = 10V AND 15V
0
100
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
40
60
80
100
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
90
600
RG = 3Ω, L = 100µH, VCE = 480V
RG = 3Ω, L = 100µH, VCE = 480V
80
500
TJ = 25oC, VGE = 10V
70
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
4
8
RG = 3Ω, L = 100µH, VCE = 480V
16
3
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
20
2
TJ = 150oC, VGE = 10V
60
TJ = 25oC, VGE = 15V
50
TJ = 150oC, VGE = 15V
40
40
60
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
400
TJ = 150oC, VGE = 10V
300
200
TJ = 25oC AND 150oC,
VGE = 10V AND 15V
100
30
20
TJ = 25oC, VGE = 10V
100
0
20
40
60
80
100
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG40N60B3 Rev. B3
HGTG40N60B3
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
180
RG = 3Ω, L = 100µH, VCE = 480V
RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC, VGE = 15V
250
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
300
TJ = 150oC, VGE = 10V
200
TJ = 25oC, VGE = 15V
150
140
TJ = 150oC, VGE = 10V AND 15V
100
60
TJ = 25oC, VGE = 10V AND 15V
TJ = 25oC, VGE = 15V
100
40
20
60
80
20
100
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
15
200
DUTY CYCLE = <0.5%, VCE = 10V
PULSE DURATION = 25µs
160
120
TC = 25oC
40
TC = 150oC
60
80
100
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = -55oC
Ig(REF) = 3.255mA, RL = 7.5Ω, TC = 25oC
12
VCE = 400V
VCE = 600V
9
6
VCE = 200V
3
0
0
4
5
6
7
8
9
0
10
50
VGE, GATE TO EMITTER VOLTAGE (V)
100
150
200
250
300
QG, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
14
FREQUENCY = 400kHz
12
C, CAPACITANCE (nF)
CIES
10
8
6
4
COES
2
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
HGTG40N60B3
ZθJC , NORMALIZED THERMAL IMPEDANCE
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
100
0.5
0.2
10-1
0.1
0.05
t1
0.02
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
L = 100µµH
90%
RHRP3060
10%
VGE
EON
EOFF
RG = 3Ω
VCE
+
-
90%
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
©2004 Fairchild Semiconductor Corporation
FIGURE 18. SWITCHING TEST WAVEFORM
HGTG40N60B3 Rev. B3
HGTG40N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 10. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 18. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
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failure to perform when properly used in accordance
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effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13