2SK4124 Ordering number : ENA0746C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 500 V ±30 V 20 A PW≤10μs, duty cycle≤1% 60 A 2.5 W Allowable Power Dissipation PD 170 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 110 mJ 20 A Avalanche Current *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*1 *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=50V, L=500μH, IAV=20A (Fig.1) *3 L≤500μH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7539-002 • Package : TO-3P-3L • JEITA, JEDEC : SC-65, TO-247, SOT-199 • Minimum Packing Quantity : 30 pcs./magazine 2SK4124-1E 4.8 15.6 5.0 1.5 Marking 7.0 3.2 Electrical Connection 16.76 10.0 13.6 3.5 18.4 19.9 2 K4124 LOT No. 1 20.0 2.0 3.0 1.0 2 3 3 1.4 1 5.45 0.6 1 : Gate 2 : Drain 3 : Source 5.45 SANYO : TO-3P-3L http://semicon.sanyo.com/en/network 51612 TKIM TC-00002752/40412 TKIM TC-00002745/D0507 TIIM TC-00001052/41807QB TIIM TC-00000661 No. A0746-1/7 2SK4124 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS IDSS ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) ID=8A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage min typ 3 VDS=10V, ID=10A 4.9 V 100 μA ±100 nA 5 9.7 See Fig.2 VDS=200V, VGS=10V, ID=20A 0.43 Ω 1200 pF 250 pF 55 pF 26.5 ns 95 ns 145 ns 58 ns 46.6 nC 8.7 nC 27.3 IS=20A, VGS=0V V S 0.33 VDS=30V, f=1MHz nC 1.0 1.3 V Fig.2 Switching Time Test Circuit VIN L VDD=200V 10V 0V ≥50Ω RG ID=10A RL=20Ω VIN D 2SK4124 VDD 50Ω Unit max 500 VDS=10V, ID=1mA Fig.1 Avalanche Resistance Test Circuit 10V 0V Ratings Conditions VOUT PW=10μs D.C.≤0.5% G 2SK4124 P.G RGS=50Ω S Ordering Information Device 2SK4124-1E Package Shipping memo TO-3P-3L 30pcs./magazine Pb Free No. A0746-2/7 2SK4124 ID -- VDS 45 ID -- VGS 45 Tc=25°C VDS=20V 15V 40 Tc= --25°C 25°C 40 10V 35 Drain Current, ID -- A Drain Current, ID -- A 35 8V 30 25 20 15 10 75°C 25 20 15 10 6V 5 30 5 VGS=5V 0 0 0 5 10 15 20 25 0 30 Drain-to-Source Voltage, VDS -- V 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 1.2 2 IT11732 20 IT11733 RDS(on) -- Tc 1.0 ID=8A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.8 0.6 Tc=75°C 25°C --25°C 0.2 5 7 9 11 13 15 Gate-to-Source Voltage, VGS -- V 2 5 5°C = Tc 3 --2 °C 75 2 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 0.1 --25 50 75 100 125 150 IT11735 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT11737 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 5 25 VGS=0V IT11736 7 0 IS -- VSD 0.01 0.2 5 SW Time -- ID 1000 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.2 3 2 5 3 0.1 0.3 3 2 5°C 7 A =8 ID 0.4 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 =1 S , VG Case Temperature, Tc -- °C VDS=10V 2 0.5 IT11734 | yfs | -- ID 3 0V 0.6 0 --50 0 3 0.7 --25°C 0.4 0.8 Tc=7 5°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.9 1.0 td (off) 2 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 2 10 0.1 10 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT11738 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT11739 No. A0746-3/7 2SK4124 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 10 20 30 40 50 Total Gate Charge, Qg -- nC 0.1 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2.0 1.5 1.0 0.5 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 10 μs s Operation in this area is limited by RDS(on). 5 71000 IT16847 PD -- Tc 200 180 170 160 140 120 100 80 60 40 20 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12248 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12249 EAS -- Ta 120 Avalanche Energy derating factor -- % 1.0 7 5 3 2 0μ 1m s 10 10m 0m s DC s op era tio n ID=20A 10 7 5 3 2 IT12415 PD -- Ta 3.0 10 IDP=60A(PW≤10μs) 0.01 0.1 0 0 ASO 100 7 5 3 2 VDS=200V ID=20A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0746-4/7 2SK4124 Magazine Specification 2SK4124-1E No. A0746-5/7 2SK4124 Outline Drawing 2SK4124-1E Mass (g) Unit 1.8 mm * For reference No. A0746-6/7 2SK4124 Note on usage : Since the 2SK4124 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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