DC COMPONENTS CO., LTD. DMBT5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -160 - - V Collector-Emitter Breakdown Voltage BVCEO -150 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -50 nA VCB=-120V Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=-100µA VCE(sat)1 - - -0.2 V IC=-10mA, IB=-1mA VCE(sat)2 - - -0.5 V IC=-50mA, IB=-5mA VBE(sat)1 - - -1 V IC=-10mA, IB=-1mA VBE(sat)2 - - -1 V IC=-50mA, IB=-5mA hFE1 50 - - - IC=-1mA, VCE=-5V hFE2 60 - 240 - IC=-10mA, VCE=-5V hFE3 50 - - - IC=-50mA, VCE=-5V fT 100 - 300 MHz - - 6 pF Cob 380µs, Duty Cycle 2% IC=-10mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz