DC COMPONENTS CO., LTD. 2SB1426 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for DC-to-DC converter applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current IC -3 A Total Power Dissipation PD 750 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -20 - - V Collector-Emitter Breakdown Voltage BVCEO -20 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -6 - - V IE=-10µA, IC=0 ICBO - - -100 nA VCB=-20V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage DC Current Gain(1) IEBO - - -100 nA VEB=-5V, IC=0 VCE(sat) - - -500 mV IC=-2A, IB=-0.1A hFE 82 - 390 - Transition Frequency fT - 240 - MHz Output Capacitance Cob - 35 - pF (1)Pulse Test: Pulse Width Test Conditions IC=-50µA, IE=0 380µs, Duty Cycle 2% Classification of hFE Rank P Q R Range 82~180 120~270 180~390 IC=-100mA, VCE=-2V IC=-500mA, VCE=-2V, f=100MHz VCB=-10V, f=1MHz, IE=0