DC COMPONENTS CO., LTD. R DXT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltages. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Total Power Dissipation PD 1.2 W Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) 1 .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 180 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 160 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA IC=100µA Collector Cutoff Current ICBO - - 50 nA VCB=120V Emitter Cutoff Current IEBO - - 50 nA VEB=4V VCE(sat)1 - - 0.15 V IC=10mA, IB=1mA Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VCE(sat)2 - - 0.2 V IC=50mA, IB=5mA VBE(sat)1 - - 1 V IC=10mA, IB=1mA VBE(sat)2 - - 1 V IC=50mA, IB=5mA hFE1 80 - - - IC=1mA, VCE=5V hFE2 80 - 250 - IC=10mA, VCE=5V hFE3 30 - - - fT 100 - 300 MHz - - 6 pF Cob 380µs, Duty Cycle 2% IC=50mA, VCE=5V VCE=10V, f=100MHz, IC=10mA VCB=10V, f=1MHz