DC COMPONENTS CO., LTD. 2SA812 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Symbol Rating Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V .091(2.30) .067(1.70) Unit Collector Current IC -100 mA Total Power Dissipation PD 150 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o 2 .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -60 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA, IC=0 ICBO - - -0.1 µA VCB=-60V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IEBO - - -0.1 µA VEB=-5V, IC=0 VCE(sat) - -0.18 -0.3 V IC=-100mA, IB=-10mA VBE(on) -0.55 -0.62 -0.65 V IC=-1mA, VCE=-6V hFE 90 200 600 - IC=-1mA, VCE=-6V fT - 180 - MHz IC=-10mA, VCE=-6V - 4.5 - pF Cob 380µs, Duty Cycle 2% VCB=-10V, f=1MHz, IE=0