DC COMPONENTS CO., LTD. 2SC1959 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency low-power amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Rating Unit Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 500 mW Junction Temperature +150 o -55 to +150 o TJ Storage Temperature TSTG .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 35 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=35V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=5V, IC=0 VCE(sat) - - 0.25 V IC=100mA, IB=10mA (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage (1) DC Current Gain VBE(on) - - 1 V IC=100mA, VCE=1V hFE1 120 - 240 - IC=100mA, VCE=1V hFE2 40 - - - IC=400mA, VCE=6V Transition Frequency fT - 300 - MHz IC=20mA, VCE=6V Output Capacitance Cob - 7 - pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% VCB=6V, f=1MHz, IE=0