DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Total Power Dissipation PD 600 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 35 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=2mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=35V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=5V, IC=0 VCE(sat) - 0.28 0.7 V IC=500mA, IB=20mA VBE(sat) - 0.98 1.3 V IC=500mA, IB=20mA hFE1 45 - - - IC=5mA, VCE=1V (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width hFE2 100 - 320 - IC=100mA, VCE=1V hFE3 40 - - - IC=500mA, VCE=1V fT - 120 - MHz IC=10mA, VCE=5V - 13 - pF Cob 380µs, Duty Cycle Classification of hFE2 Rank O Y Range 100~200 160~320 2% VCB=10V, f=1MHz, IE=0