MMDTC123W NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Resistance Values R1 (KΩ) R2 (KΩ) 2.2 Base (Input) 47 R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 10 V VI + 12 -5 V IC 100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O Input Voltage Positive Negative Collector Current Total Power Dissipation C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 10 mA hFE 100 - - - Collector Base Cutoff Current at VCB = 50 V ICBO - - 100 nA Collector Emitter Cutoff Current at VCE = 30 V ICEO - - 1 µA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 180 µA Collector Emitter Saturation Voltage at IC = 5 mA, IB = 0.25 mA VCEsat - - 0.1 V Input Off Voltage at VCE = 5 V, IC = 100 µA VI(off) - - 0.5 V Input On Voltage at VCE = 0.3 V, IC = 5 mA VI(on) 1.1 - - V Collector Capacitance at VCB = 10 V, f = 1 MHz CC - - 2.5 pF Input Resistance R1 1.54 2.2 2.86 KΩ Resistance Ratio R2/R1 17 21 26 - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 28/11/2006