S8 550 SOT-23 TRANSISTOR(PNP) FEATURES z Complimentary to S8050 1. BASE Collector current: IC=0.5A z 2. EMITTER MARKING : 3. COLLECTOR 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC = -100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA IE=0 400 hFE(1) VCE= -1V, IC= -50mA 120 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V DC current gain fT Transition frequency CLASSIFICATION OF Rank Range VCE= -6V, IC= -20mA 150 f=30MHz MHz hFE(1) L H 120-200 200-350 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ S8 550 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５