S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 z z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCB=20V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA HFE(1) VCE=1V, IC= 50mA 120 HFE(2) VCE=1V, IC= 500mA 50 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V fT Transition frequency CLASSIFICATION OF Rank Range VCE=6V, f=30MHz IC= 20mA 150 MHz hFE(1) L H 120-200 200-350 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ S8 050 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５