Inchange Semiconductor Product Specification MJW16206 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・Designed for use in horizontal deflection circuits for high and every high resolution, monochrome and color CRT monitors PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 12 A ICM Collector current-peak 15 A IB Base current 5.0 A IBM Base current-peak 10 A PD Total power dissipation 150 39 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 0.67 ℃/W TC=25℃ TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJW16206 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1.0mA; IC=0 8 V VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=6.5A ;IB=1.5A 1.0 V Base-emitter saturation voltage IC=6.5A ;IB=1.5A 1.5 V ICES Collector cut-off current VCE=1200V,VBE=0 VCE=850V,VBE=0 250 25 μA IEBO Emitter cut-off current VEB=8V; IC=0 25 μA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=10A ; VCE=5V 5 hFE-3 DC current gain IC=12A ; VCE=5V 3 Transition frequency IC=0.5A ; VCE=10V;f=1.0MHz Collector outoput capacitance IE=0; f=100kHz ; VCB=10V VBEsat fT COB CONDITIONS 2 MIN TYP. MAX UNIT 24 13 3.0 MHz 350 pF Inchange Semiconductor Product Specification MJW16206 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3