ISC MJW16206

Inchange Semiconductor
Product Specification
MJW16206
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-247 package
・High voltage ,high speed
・Low collector saturation voltage
APPLICATIONS
・Designed for use in horizontal deflection
circuits for high and every high resolution,
monochrome and color CRT monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
12
A
ICM
Collector current-peak
15
A
IB
Base current
5.0
A
IBM
Base current-peak
10
A
PD
Total power dissipation
150
39
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
0.67
℃/W
TC=25℃
TC=100℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
MJW16206
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA; IB=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1.0mA; IC=0
8
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A ;IB=0.4A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=6.5A ;IB=1.5A
1.0
V
Base-emitter saturation voltage
IC=6.5A ;IB=1.5A
1.5
V
ICES
Collector cut-off current
VCE=1200V,VBE=0
VCE=850V,VBE=0
250
25
μA
IEBO
Emitter cut-off current
VEB=8V; IC=0
25
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=10A ; VCE=5V
5
hFE-3
DC current gain
IC=12A ; VCE=5V
3
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
Collector outoput capacitance
IE=0; f=100kHz ; VCB=10V
VBEsat
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
UNIT
24
13
3.0
MHz
350
pF
Inchange Semiconductor
Product Specification
MJW16206
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3