FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 25 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units FPNH10 350 2.8 125 mW mW/°C °C/W 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2000 Fairchild Semiconductor Corporation FPNH10 Rev. A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA V ON CHARACTERISTICS hFE DC Current Gain IC = 4.0 mA, VCE = 10 V VCE(sat) Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 60 0.5 V VBE(on) Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product C cb Collector-Base Capacitance C rb Common-Base Feedback Capacitance Collector Base Time Constant rb’C c IC = 4.0 mA, V CE = 10 V, f = 100 MHz V CB = 10 V, IE = 0, f = 1.0 MHz 650 V CB = 10 V, IE = 0, f = 1.0 MHz 0.34 IC = 4.0 mA, V CB = 10 V, f = 31.8 MHz MHz 0.720 pF 0.65 pF 9.0 ps *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) FPNH10 NPN RF Transistor (continued) Vce = 5V 80 125 °C 60 25 °C 40 20 - 40 °C 0 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 0.9 - 40 °C 0.8 25 °C 0.7 125 °C 0.6 0.5 0.4 0.3 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 20 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 100 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.2 β = 10 0.15 125 °C 0.1 0.05 0.1 20 1 VCE = 5V - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0.01 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Po we r D iss ip ation vs. Amb ien t Tem pe ra ture P D - PO W ER DISS IPAT IO N (W ) ICBO- COLLECTOR CURRENT (nA) 1 10 I C - COLLECTOR CURRENT (mA) P 42 10 VCB = 30V 1 35 0 30 0 25 0 150 TO-9 2 20 0 15 0 10 0 50 0 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) - 40 °C Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 0.1 25 25 °C 0 25 50 75 10 0 T A - T EMPE RATUR E ( o C) 12 5 15 0 FPNH10 NPN RF Transistor (continued) Common Base Y Parameters vs. Frequency 80 g ib 40 VCE = 10V I C = 5 mA 0 -40 b ib -80 -120 100 200 500 f - FREQUENCY (MHz) ( 1000 12 VCE = 10V 10 8 6 b ob 4 0 100 Forward Transfer Admittance 200 500 f - FREQUENCY (MHz) 1000 Reverse Transfer Admittance b fb 80 40 0 g fb -40 -120 100 g ob 2 P 42 (BASE) 120 -80 I C = 5 mA S ) VCE = 10V I C = 5 mA 200 500 f - FREQUENCY (MHz) 1000 Yrb - REVERSE ADMITTANCE (mmhos) Y fb - FORWARD ADMITTANCE (mmhos) Output Admittance Yob - OUTPUT ADMITTANCE (mmhos) Yib - INPUT ADMITTANCE (mmhos) Input Admittance 120 8 VCE = 10V 6 I C = 5 mA 4 -b rb 2 -g rb 0 100 200 500 f - FREQUENCY (MHz) 1000 FPNH10 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Output Admittance VCE = 10V I C = 2 mA 20 g ie 16 12 b ie 8 4 0 100 200 500 f - FREQUENCY (MHz) 1000 Yoe - OUTPUT ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) Input Admittance 24 6 VCE = 10V 5 I C = 2 mA 4 b oe 3 2 1 g oe 0 100 200 500 f - FREQUENCY (MHz) Forward Transfer Admittance VCE = 10V 40 I C = 2 mA g fe 20 0 -20 -40 -60 100 b fe 200 500 f - FREQUENCY (MHz) ( ) (EMITTER) Reverse Transfer Admittance 60 1000 Yre - REVERSE ADMITTANCE (mmhos) Y fe - FORWARD ADMITTANCE (mmhos) P 1000 1.2 1 VCE = 10V I C = 2 mA 0.8 -b re 0.6 0.4 0.2 0 100 -g re 200 500 f - FREQUENCY (MHz) 1000 FPNH10 NPN RF Transistor (continued) Test Circuits 2.0 KΩ Ω 10 KΩ Ω VCC = 12 V 1000 pF 1000 pF 0.8-10 pF 100 pF L2 T1 2.0 pF TUM 1000 pF Input 50 Ω 0.8-10 pF L1 5.0-18 pF 1000 pF 680 Ω 1000 pF L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire VBB FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output Ω into 50Ω RFC (NOTE 1) 1000 pF 2.2 KΩ Ω - Vee NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC VCC FIGURE 2: 500 MHz Oscillator Circuit FPNH10 NPN RF Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G