UM0004 N-Ch 100V Fast Switching MOSFETs General Description Product Summery The UM0004 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM0004 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 100V 112mΩ 2.5A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 2.5 A 1 2 A 10 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 7.3 mJ IAS Avalanche Current 11 A 3 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 25 ℃/W QM0004S UM0004 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=2A --- 90 112 mΩ VGS=4.5V , ID=1A --- 95 120 mΩ 1.0 1.5 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) --- 26.2 36.7 Qgs Gate-Source Charge --- 3.8 5.32 Qgd Gate-Drain Charge --- 4.8 6.7 Td(on) VDS=80V , VGS=10V , ID=2A Turn-On Delay Time uA nC --- 4.2 8.4 Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 7.6 14 Turn-Off Delay Time ID=2A --- 41 82 Fall Time --- 14 28 Ciss Input Capacitance --- 1535 2149 Coss Output Capacitance --- 60 84 Crss Reverse Transfer Capacitance --- 37 52 Min. Typ. Max. Unit 1.5 --- --- mJ Min. Typ. Max. Unit --- --- 2.5 A Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=5A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=2A , dI/dt=100A/µs , TJ=25℃ --- --- 10 A --- --- 1.2 V --- 35 --- nS --- 17 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM0004 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 96 15 ID=2A VGS=10V VGS=7V 94 VGS=5V VGS=4.5V RDSON (mΩ) ID Drain Current (A) 12 9 92 VGS=3V 6 90 3 88 0 0 0.5 1 1.5 2 4 2.5 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 UM0004 N-Ch 100V Fast Switching MOSFETs 10000 10.00 F=1.0MHz 100us 1ms 1000 1.00 10ms ID (A) Capacitance (pF) Ciss 100 o TA=25 C Single Pulse Crss 10 1 5 9 13 17 21 100ms 0.10 Coss 25 VDS , Drain to Source Voltage (V) 0.01 0.01 0.1 Fig.7 Capacitance DC 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4