UNITPOWER UM0004

UM0004
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The UM0004 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM0004 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
100V
112mΩ
2.5A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Rating
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
1
2.5
A
1
2
A
10
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
7.3
mJ
IAS
Avalanche Current
11
A
3
PD@TA=25℃
Total Power Dissipation
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
85
℃/W
---
25
℃/W
QM0004S
UM0004
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
100
---
---
V
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
VGS=10V , ID=2A
---
90
112
mΩ
VGS=4.5V , ID=1A
---
95
120
mΩ
1.0
1.5
2.5
V
---
-4.57
---
mV/℃
VDS=80V , VGS=0V , TJ=25℃
---
---
1
VDS=80V , VGS=0V , TJ=55℃
---
---
5
VGS=0V , ID=250uA
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=2A
---
20
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
Qg
Total Gate Charge (10V)
---
26.2
36.7
Qgs
Gate-Source Charge
---
3.8
5.32
Qgd
Gate-Drain Charge
---
4.8
6.7
Td(on)
VDS=80V , VGS=10V , ID=2A
Turn-On Delay Time
uA
nC
---
4.2
8.4
Rise Time
VDD=50V , VGS=10V , RG=3.3Ω
---
7.6
14
Turn-Off Delay Time
ID=2A
---
41
82
Fall Time
---
14
28
Ciss
Input Capacitance
---
1535
2149
Coss
Output Capacitance
---
60
84
Crss
Reverse Transfer Capacitance
---
37
52
Min.
Typ.
Max.
Unit
1.5
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
2.5
A
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=5A
Diode Characteristics
Symbol
IS
Parameter
Conditions
1,6
Continuous Source Current
2,6
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=2A , dI/dt=100A/µs , TJ=25℃
---
---
10
A
---
---
1.2
V
---
35
---
nS
---
17
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM0004
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
96
15
ID=2A
VGS=10V
VGS=7V
94
VGS=5V
VGS=4.5V
RDSON (mΩ)
ID Drain Current (A)
12
9
92
VGS=3V
6
90
3
88
0
0
0.5
1
1.5
2
4
2.5
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
6
VGS (V)
8
10
Fig.2 On-Resistance vs. Gate-Source
10
IS Source Current(A)
8
6
TJ=150℃
4
TJ=25℃
2
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.5
Normalized On Resistance
1.8
2.0
Normalized VGS(th)
1.4
1.5
1
0.6
1.0
0.2
0.5
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
UM0004
N-Ch 100V Fast Switching MOSFETs
10000
10.00
F=1.0MHz
100us
1ms
1000
1.00
10ms
ID (A)
Capacitance (pF)
Ciss
100
o
TA=25 C
Single Pulse
Crss
10
1
5
9
13
17
21
100ms
0.10
Coss
25
VDS , Drain to Source Voltage (V)
0.01
0.01
0.1
Fig.7 Capacitance
DC
1
VDS (V)
10
100
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
SINGLE
TJpeak = TC+P DMXRθJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4