UNITPOWER UM3201

UM3201
Dual P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM3201 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM3201 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
-30V
45mΩ
-6A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
Dual SOP8 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=100℃
IDM
Rating
Units
Drain-Source Voltage
-30
V
Gate-Source Voltage
±20
V
1
-6
A
1
-4
A
-12
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
59
mJ
IAS
Avalanche Current
19
A
4
[email protected]=25℃
Total Power Dissipation
2.08
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
85
℃/W
---
60
℃/W
UM3201
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.085
---
V/℃
VGS=-10V , ID=-6A
---
35
45
VGS=-4.5V , ID=-3A
---
65
82
-1.0
-1.5
-2.5
V
---
0.375
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
1
VDS=-24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-10V , ID=-6A
---
6
---
S
Qg
Total Gate Charge (-4.5V)
---
6.4
---
Qgs
Gate-Source Charge
---
2.7
---
Qgd
Gate-Drain Charge
---
3.1
---
Td(on)
VDS=-20V , VGS=-4.5V , ID=-6A
nC
---
9
---
Rise Time
VDD=-12V , VGS=-10V , RG=3.3Ω,
---
16.6
---
Turn-Off Delay Time
ID=-5A
---
21
---
Fall Time
---
21.6
---
Ciss
Input Capacitance
---
645
---
Coss
Output Capacitance
---
272
---
Crss
Reverse Transfer Capacitance
---
105
---
Min.
Typ.
Max.
Unit
16
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
Turn-On Delay Time
uA
VDS=-25V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=-25V , L=0.1mH , IAS=-10A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-6A , TJ=25℃
---
---
-6
A
---
---
-12
A
---
---
-1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM3201
Dual P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
10
144
8
VGS=-10V
117
VGS=-7V
6
RDSON (mΩ)
-ID Drain Current (A)
ID=-10A
VGS=-5V
4
VGS=-4.5V
VGS=-3V
63
2
0
0
0.5
1
1.5
90
36
2
2
-VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
8
10
10
-VGS Gate to Source Voltage (V)
8
-IS Source Current(A)
6
-VGS (V)
Fig.2 On-Resistance vs. Gate-Source
10
TJ=150℃
TJ=25℃
6
4
2
VDS=-20V
ID=-6A
8
6
4
2
0
0
0.2
0.4
0.6
0.8
0
1
4
8
12
QG , Total Gate Charge (nC)
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
2.0
Normalized On Resistance
1.8
1.4
Normalized -VGS(th)
4
1.5
1
1.0
0.6
0.5
0.2
-50
0
50
100
TJ ,Junction Temperature (℃)
-50
150
Fig.5 Normalized VGS(th) vs. TJ
25
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
175
UM3201
Dual P-Ch 30V Fast Switching MOSFETs
1000
100
F=1.0MHz
Ciss
Capacitance (pF)
10
100
-ID (A)
Coss
Crss
100us
1
1ms
10ms
0
100ms
DC
TC=25℃
Single Pulse
0
10
1
5
9
13
17
-VDS Drain to Source Voltage(V)
21
0.1
25
Fig.7 Capacitance
1
-VDS (V)
10
100
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC )
1
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.01
SINGLE PULSE
0.01
0.00001
TON
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
10