UM3201 Dual P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UM3201 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM3201 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 45mΩ -6A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology Dual SOP8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -6 A 1 -4 A -12 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 59 mJ IAS Avalanche Current 19 A 4 PD@TC=25℃ Total Power Dissipation 2.08 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 60 ℃/W UM3201 Dual P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.085 --- V/℃ VGS=-10V , ID=-6A --- 35 45 VGS=-4.5V , ID=-3A --- 65 82 -1.0 -1.5 -2.5 V --- 0.375 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-6A --- 6 --- S Qg Total Gate Charge (-4.5V) --- 6.4 --- Qgs Gate-Source Charge --- 2.7 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-6A nC --- 9 --- Rise Time VDD=-12V , VGS=-10V , RG=3.3Ω, --- 16.6 --- Turn-Off Delay Time ID=-5A --- 21 --- Fall Time --- 21.6 --- Ciss Input Capacitance --- 645 --- Coss Output Capacitance --- 272 --- Crss Reverse Transfer Capacitance --- 105 --- Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-6A , TJ=25℃ --- --- -6 A --- --- -12 A --- --- -1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM3201 Dual P-Ch 30V Fast Switching MOSFETs Typical Characteristics 10 144 8 VGS=-10V 117 VGS=-7V 6 RDSON (mΩ) -ID Drain Current (A) ID=-10A VGS=-5V 4 VGS=-4.5V VGS=-3V 63 2 0 0 0.5 1 1.5 90 36 2 2 -VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 8 10 10 -VGS Gate to Source Voltage (V) 8 -IS Source Current(A) 6 -VGS (V) Fig.2 On-Resistance vs. Gate-Source 10 TJ=150℃ TJ=25℃ 6 4 2 VDS=-20V ID=-6A 8 6 4 2 0 0 0.2 0.4 0.6 0.8 0 1 4 8 12 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 2.0 Normalized On Resistance 1.8 1.4 Normalized -VGS(th) 4 1.5 1 1.0 0.6 0.5 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ 25 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 175 UM3201 Dual P-Ch 30V Fast Switching MOSFETs 1000 100 F=1.0MHz Ciss Capacitance (pF) 10 100 -ID (A) Coss Crss 100us 1 1ms 10ms 0 100ms DC TC=25℃ Single Pulse 0 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 -VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC ) 1 DUTY=0.5 0.2 0.1 0.1 0.05 PDM 0.02 T D = TON/T TJpeak = TC + PDM x RθJC 0.01 SINGLE PULSE 0.01 0.00001 TON 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4 10