STMICROELECTRONICS STRH8N10

STRH8N10
Rad-Hard N-channel 100 V, 6 A
Power MOSFET
Features
VDSS
ID
RDS(on)
Qg
100 V
6A
0.30 Ω
22 nC
■
Fast switching
■
100% avalanche tested
■
Hermetic package
■
70 krad TID
■
SEE radiation hardened
TO-39
Applications
■
Satellite
■
High reliability
Figure 1.
Internal schematic diagram
Description
This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process. It
has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
Table 1.
Device summary
Order code
ESCC part
number
Quality
level
STRH8N10N1
-
Engineering
model
STRH8N10NG
Note:
TBD
Package
Lead
finish
Mass
TO-39
Gold
1.2
(g)
Temp. range
EPPL
-
ESCC flight
-55 to 150°C
Target
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 010029 Rev 2
1/18
www.st.com
18
Contents
STRH8N10
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STRH8N10
1
Electrical ratings
Electrical ratings
(TC = 25°C unless otherwise specified)
Table 2.
Absolute maximum ratings (pre-irradiation)
Symbol
Parameter
Value
Unit
VDS(1)
Drain-source voltage (VGS = 0)
100
V
VGS(2)
Gate-source voltage
±20
V
Drain current (continuous) at TC= 25°C
6
A
Drain current (continuous) at TC= 100°C
4.1
A
Drain current (pulsed)
24
A
PTOT (1)
Total dissipation at TC= 25°C
25
W
dv/dt (5)
Peak diode recovery voltage slope
6.4
V/ns
-55 to 150
°C
150
°C
ID (3)
ID
(1)
IDM
(4)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. This rating is guaranteed @ TJ > 25 °C (see Figure 10: Normalized BVDSS vs temperature).
2. This value is guaranteed over the full range of temperature.
3. Rated according to the Rthj-case + Rthc-s.
4. Pulse width limited by safe operating area.
5. ISD ≤ 6 A, di/dt ≤ 1060 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case
Table 4.
Symbol
IAR
Value
Unit
5.0
°C/W
Value
Unit
4
A
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS(1)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
457
mJ
EAS
Single pulse avalanche energy
(starting Tj=110°C, Id=Iar, Vdd=50V)
134
mJ
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Electrical ratings
Table 4.
STRH8N10
Avalanche characteristics (continued)
Symbol
Parameter
Unit
EAR
Repetitive avalanche
(Vdd = 50 V, IAR = 4 A, f = 100 KHz, TJ = 25 °C,
duty cycle = 10%)
4.3
mJ
EAR
Repetitive avalanche
(Vdd = 50 V, IAR = 4 A, f = 100 KHz, TJ = 110 °C,
duty cycle = 10%)
1.4
mJ
1. Maximum rating value.
4/18
Value
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STRH8N10
2
Electrical characteristics
Electrical characteristics
(TCASE = 25°C unless otherwise specified).
2.1
Pre-irradiation
Table 5.
Symbol
IDSS
IGSS
VGS(th)
RDS(on)
Table 6.
Symbol
On/off states
Parameter
Test conditions
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Min.
Typ.
Max.
Unit
1
mA
80% BVDss
80% BVDss, TC = 125 °C
10
100
µA
VGS = 20 V
VGS = -20 V
VGS = 20 V, TC = 125 °C
VGS = -20 V, TC = 125 °C
100
100% BVDss
VDS =VGS, ID = 1mA
VDS =VGS, ID = 1mA ,
TC = 125 °C
VDS =VGS, ID = 1mA ,
TC = -55 °C
-100
200
nA
-200
2
1.5
4.5
3.7
V
2.1
5.5
VGS = 12 V, ID = 4 A
VGS = 12 V, ID = 4 A,
TC = 125 °C
0.30
0.72
Ω
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0V
527
76
31
659
95
39
791
114
47
pF
pF
pF
Equivalent output
capacitance (2)
VDD = 80 V, VGS=0V
Qg
Qgs
Qgd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 50 V, ID = 4 A,
VGS= 12 V
RG(3)
Gate input resistance
f=1MHz gate DC bias=0
test signal level=20mV
open drain
Ciss
Coss(1)
Crss
Coss eq.(1)
162
15
3
4
18.5
4
5.5
1.6
pF
22
5
7
nC
nC
nC
Ω
1. This value is guaranteed over the full range of temperature.
2. This value is defined as the ratio between the Qoss and the voltage value applied.
3. Not tested, guaranteed by process.
Doc ID 010029 Rev 2
5/18
Electrical characteristics
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
STRH8N10
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50 V, ID = 4 A,
RG = 4.7 Ω, VGS = 12 V
Typ.
Max
Unit
6
4
13
3
10.5
10.5
21.5
5.5
15
17
30
8
ns
ns
ns
ns
Min.
Typ.
Max
Unit
6
24
A
A
1.5
1.275
V
Source drain diode(1)
Parameter
Test conditions
ISD
ISDM (2)
Source-drain current
Source-drain current (pulsed)
VSD (3)
Forward on voltage
ISD = 8 A, VGS = 0
ISD = 8 A, VGS = 0,
TC = 125 °C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100
A/µs
VDD= 17 V, Tj = 25 °C
196
245
1.2
10
294
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A,
di/dt = 100 A/µs, VDD=
17 V, Tj = 150 °C
282
352
1.7
10.5
422
ns
µC
A
trr(4)
Qrr(4)
IRRM(4)
trr(4)
Qrr(4)
IRRM(4)
1. Refer to the Figure 16: Source drain diode.
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4. Not tested in production, guaranteed by process.
6/18
Min.
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STRH8N10
3
Radiation characteristics
Radiation characteristics
The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to radiative environments. Every manufacturing lot is tested for total ionizing dose, according
to the ESCC 22900 specification window 1, using the TO-39 package. Both pre-irradiation
and post-irradiation performances are tested and specified using the same circuitry and test
conditions in order to provide a direct comparison.
(Tamb= 22 ± 3 °C unless otherwise specified).
Total dose radiation (TID) testing
One bias conditions using the TO-39 package:
–
VGS bias: + 15 V applied and VDS= 0 V during irradiation
The following parameters are measured (see Table 9, Table 10 and Table 11):
●
before irradiation
●
after irradiation
●
after 24 hrs @ room temperature
●
after 168 hrs @ 100 °C anneal
Table 9.
Symbol
Post-irradiation on/off states @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))
Parameter
Test conditions
Drift values ∆
Unit
IDSS
Zero gate voltage drain current
(VGS = 0)
80% BVDss
+1
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
VGS = -20 V
1.5
-1.5
nA
BVDSS
Drain-to-source breakdown
voltage
VGS = 0, ID = 1 mA
-25%
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
-60% / + 30%
V
RDS(on)
Static drain-source on resistance
VGS = 10 V; ID = 4 A
±10%
Ω
Table 10.
Symbol
Qg
Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))
Parameter
Test conditions
Drift values ∆
Unit
-5% / + 40%
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
IG = 0.2 mA, VGS = 12 V,
VDS = 50 V, IDS = 4 A
±35%
nC
-5% / + 130%
Doc ID 010029 Rev 2
7/18
Radiation characteristics
STRH8N10
Source drain diode post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K
Rad(Si))(1)
Table 11.
Symbol
Parameter
VSD (2)
Test conditions
Forward on voltage
Drift values ∆.
Unit
±2%
V
ISD = 8 A, VGS = 0
1. Refer to Figure 16.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Single event effect, SOA
The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to heavy ion environment for single event effect according to MIL-STD-750E method 1080
(bias circuit in Figure 3: Single event effect, bias circuit) SEB and SEGR tests have been
performed with a fluence of 3e+5 ions/cm².
The accept/reject criteria are:
●
SEB test: drain voltage checked, trigger level is set to Vds = - 5 V. Stop condition: as
soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².
●
SEGR test: the gate current is monitored every 100 ms. A gate stress is performed
before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA
(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².
The results are:
Table 12.
–
no SEB
–
SEGR test produces the following SOA (see Table 12: Single event effect (SEE),
safe operating area (SOA) and Figure 2: Single event effect, SOA)
Single event effect (SEE), safe operating area (SOA)
Ion Let (Mev/(mg/cm2)
Kr
8/18
32
Energy Range
(MeV)
(µm)
768
94
VDS (V)
@VGS=0 @VGS= -2 V @VGS= -5 V @VGS= -10 V @VGS= -20 V
100
80
Doc ID 010029 Rev 2
60
30
10
STRH8N10
Radiation characteristics
Figure 2.
Single event effect, SOA
100
90
Kr (32 MeV.cm²/mg)
70
60
50
40
30
Vds (% Vdsmax)
80
20
10
0
-20
-15
-10
-5
0
Vgs (V)
Figure 3.
Single event effect, bias circuit(a)
a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) .
Doc ID 010029 Rev 2
9/18
Electrical characteristics (curves)
STRH8N10
4
Electrical characteristics (curves)
Figure 4.
Safe operating area
Figure 5.
Thermal impedance
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
HV33200
ID
(A)
ID (A)
VGS = 10 V
25
VGS = 7 V
10.0
20
15
VGS = 6 V
1.0
10
5
150°C
VGS = 5 V
0
0
Figure 8.
20
10
VDS(V)
0.1
3.50
Gate charge vs gate-source voltage Figure 9.
HV33210
VGS
(V)
VDS = 50 V
-55°C
25°C
4.00
4.50
5.00
5.50
6.00
VGS(V)
Capacitance variations
HV33220
C
(pF)
ID = 8 A
Ciss
1000
12
10
Coss
100
8
ID = 4 A
6
4
10
ID = 2 A
Crss
2
0
0
10/18
5
10
15
20
Qg(nC)
Doc ID 010029 Rev 2
1
0.1
1
10
VDS(V)
STRH8N10
Electrical characteristics (curves)
Figure 10. Normalized BVDSS vs temperature
Figure 11. Static drain-source on resistance
RDS(on)
(mΩ)
800
HV33240
VGS=12 V
700
600
500
400
300
200
100
0
1
Figure 12. Normalized gate threshold voltage
vs temperature
2
3
4
5
6
7
ID(A)
Figure 13. Normalized on resistance vs
temperature
Figure 14. Source drain-diode forward
characteristics
HV33270
VSD
(V)
1.3
Tj = -50 °C
1.2
1.1
Tj = 25 °C
1.0
0.9
Tj = 150 °C
0.8
0.7
0.6
1
2
3
4
5
6
7
ISD(A)
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11/18
Test circuit
5
STRH8N10
Test circuit
Figure 15. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
Figure 16. Source drain diode
12/18
Doc ID 010029 Rev 2
STRH8N10
Test circuit
Figure 17. Unclamped inductive load test circuit (single pulse and repetitive)
Doc ID 010029 Rev 2
13/18
Package mechanical data
6
STRH8N10
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
14/18
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STRH8N10
Package mechanical data
Table 13.
TO-39 mechanical data
mm
Inch
Dim.
Min.
Typ.
Max.
Min.
Typ.
Max.
A
12.70
14.20
0.500
0.559
B
0.40
0.49
0.016
0.019
C
0.58
0.74
0.023
0.029
D
6.00
6.40
0.237
0.252
E
8.15
8.25
0.358
-
0.362
-
F
9.10
9.20
0.358
0.362
G
4.93
5.23
0.194
0.206
H
0.85
0.95
0.033
0.037
I
0.75
0.85
0.029
0.033
L
42°
48°
Figure 18. TO-39 drawing
Doc ID 010029 Rev 2
15/18
Order codes
7
STRH8N10
Order codes
Table 14.
Ordering information
Order code
ESCC part
number
Quality
level
STRH8N10N1
-
Engineering
model
STRH8N10NG
TBD
EPPL Package
Lead
finish
TO-39
ESCC flight Target
Marking
Packing
STRH8N10N1
Strip
pack
Gold
TBD
Contact ST sales office for information about the specific conditions for products in die form
and other package options.
16/18
Doc ID 010029 Rev 2
STRH8N10
8
Revision history
Revision history
Table 15.
Document revision history
Date
Revision
Changes
20-May-2011
1
First release.
09-Nov-2011
2
Updated dynamic values on Table 6: Dynamic, Table 7: Switching
times.
Doc ID 010029 Rev 2
17/18
STRH8N10
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