STMICROELECTRONICS STW3N150

STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type
VDSS
RDS(on)
max.
STFW3N150
STP3N150
STW3N150
1500 V
1500 V
1500 V
<9Ω
<9Ω
<9Ω
PTOT
ID
2.5 A 63 W
2.5 A 140 W
2.5 A 140 W
■
100% avalanche tested
■
Intrinsic capacitances and Qg minimized
■
High speed switching
■
Fully isolated TO-3PF plastic package
■
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
3
1
2
TO-220
2
3
3
1
1
TO-247
Figure 1.
2
TO-3PF
Internal schematic diagram
Application
$
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
Package
Packaging
STFW3N150
3N150
TO-3PF
Tube
STP3N150
3N150
TO-220
Tube
STW3N150
3N150
TO-247
Tube
June 2010
Doc ID 13102 Rev 9
1/15
www.st.com
15
Contents
STFW3N150, STP3N150, STW3N150
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
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Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220,TO-247
TO-3PF
VDS
Drain-source voltage (VGS = 0)
1500
V
VGS
Gate-source voltage
± 30
V
ID
ID
(1)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
2.5
2.5(1)
A
1.6
1.6
(1)
A
10
(1)
A
Drain current (pulsed)
10
PTOT
Total dissipation at TC = 25 °C
140
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
IDM
Derating factor
Tstg
Tj
63
W
3500
V
0.5
W/°C
1.12
Storage temperature
Max. operating junction temperature
-50 to 150
°C
150
°C
1. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient
max
Tj
Table 4.
Symbol
TO-220
TO-247
TO-3PF
Unit
2
°C/W
50
°C/W
0.89
62.5
Maximum lead temperature for
soldering purpose
50
300
°C
Avalanche characteristics
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
450
mJ
Doc ID 13102 Rev 9
3/15
Electrical characteristics
2
STFW3N150, STP3N150, STW3N150
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on
Static drain-source on
resistance
Symbol
Typ.
Max.
Unit
1500
V
10
500
µA
µA
± 100
nA
4
5
V
6
9
Ω
Min.
Typ.
Max.
Unit
VGS = ± 30 V
VGS(th)
Table 6.
Min.
3
VGS = 10 V, ID = 1.3 A
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 30 V, ID = 1.3 A
-
2.6
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
-
939
102
13.2
-
pF
pF
pF
VDS=0 to 1200 V, VGS = 0
-
100
-
pF
Coss eq. (2) Equivalent output
capacitance
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-
4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 1200 V, ID = 2.5 A,
VGS = 10 V
(see Figure 19)
-
29.3
4.6
17
-
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15
Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750 V, ID = 1.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min.
Typ.
-
24
47
45
61
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Min. Typ. Max. Unit
-
2.5
10
A
A
1.6
V
Forward on voltage
ISD = 2.5 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
-
410
2.4
11.7
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V, Tj = 150 °C
(see Figure 20)
-
540
3.3
12.3
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 13102 Rev 9
5/15
Electrical characteristics
STFW3N150, STP3N150, STW3N150
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
Figure 3.
AM03934v1
ID
(A)
δ=0.5
0.2
0.1
is
0.01
0.1
(o
n
)
10µs
DS
Op
Lim era
ite tion
d
by in th
m is
ax ar
R ea
0.1
TO3PF
K
10
1
Thermal impedance for TO-3PF
100µs
10
0.05
0.02
1ms
10
100
0.01
10ms
Tj=150°C
Tc=25°C
Single pulse
Sinlge
pulse
1
-1
-2
1000
VDS(V)
10 -5
10
-4
10
-3
10
-2
10
-1
10
tp (s)
Figure 4.
Safe operating area for TO-220
Figure 5.
Thermal impedance for TO-220
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
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Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Normalized BVDSS vs. temperature Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs. gate-source
voltage
Figure 13. Capacitance variations
Doc ID 13102 Rev 9
7/15
Electrical characteristics
STFW3N150, STP3N150, STW3N150
Figure 14. Normalized gate threshold voltage
vs. temperature
Figure 15. Normalized on resistance vs.
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Maximum avalanche energy vs Tj
8/15
Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 13102 Rev 9
10%
AM01473v1
9/15
Package mechanical data
4
STFW3N150, STP3N150, STW3N150
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/15
Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Doc ID 13102 Rev 9
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/15
Package mechanical data
STFW3N150, STP3N150, STW3N150
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
Typ
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
øP
3.55
3.65
øR
4.50
5.50
S
12/15
Max.
5.15
5.50
Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
Package mechanical data
TO-3PF mechanical data
DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
Dia
mm.
typ
min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
5.45
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
10
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
7627132_C
Doc ID 13102 Rev 9
13/15
Revision history
5
STFW3N150, STP3N150, STW3N150
Revision history
Table 9.
14/15
Document revision history
Date
Revision
Changes
12-Jan-2007
1
First release
17-Apr-2007
2
Added new value on Table 6.
14-May-2007
3
The document has been reformatted
29-Aug-2007
4
RDS(on) value changed, updated Figure 15
09-Apr-2008
5
Added new package: TO-3PF
13-Feb-2009
6
Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings)
01-Dec-2009
7
– Document status promoted from preliminary data to datasheet
– Removed TO-220FH package and mechanical data
10-Dec-2009
8
Corrected VISO value in Table 2: Absolute maximum ratings
29-Jun-2010
9
Corrected unit in Table 3.
Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150
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Doc ID 13102 Rev 9
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