STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max. STFW3N150 STP3N150 STW3N150 1500 V 1500 V 1500 V <9Ω <9Ω <9Ω PTOT ID 2.5 A 63 W 2.5 A 140 W 2.5 A 140 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic package ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF 3 1 2 TO-220 2 3 3 1 1 TO-247 Figure 1. 2 TO-3PF Internal schematic diagram Application $ Switching applications Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. ' 3 !-V Device summary Order codes Marking Package Packaging STFW3N150 3N150 TO-3PF Tube STP3N150 3N150 TO-220 Tube STW3N150 3N150 TO-247 Tube June 2010 Doc ID 13102 Rev 9 1/15 www.st.com 15 Contents STFW3N150, STP3N150, STW3N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220,TO-247 TO-3PF VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate-source voltage ± 30 V ID ID (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 2.5 2.5(1) A 1.6 1.6 (1) A 10 (1) A Drain current (pulsed) 10 PTOT Total dissipation at TC = 25 °C 140 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) IDM Derating factor Tstg Tj 63 W 3500 V 0.5 W/°C 1.12 Storage temperature Max. operating junction temperature -50 to 150 °C 150 °C 1. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tj Table 4. Symbol TO-220 TO-247 TO-3PF Unit 2 °C/W 50 °C/W 0.89 62.5 Maximum lead temperature for soldering purpose 50 300 °C Avalanche characteristics Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 450 mJ Doc ID 13102 Rev 9 3/15 Electrical characteristics 2 STFW3N150, STP3N150, STW3N150 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance Symbol Typ. Max. Unit 1500 V 10 500 µA µA ± 100 nA 4 5 V 6 9 Ω Min. Typ. Max. Unit VGS = ± 30 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 1.3 A Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 30 V, ID = 1.3 A - 2.6 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 939 102 13.2 - pF pF pF VDS=0 to 1200 V, VGS = 0 - 100 - pF Coss eq. (2) Equivalent output capacitance Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 1200 V, ID = 2.5 A, VGS = 10 V (see Figure 19) - 29.3 4.6 17 - nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 750 V, ID = 1.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min. Typ. - 24 47 45 61 Max. Unit - ns ns ns ns Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max. Unit - 2.5 10 A A 1.6 V Forward on voltage ISD = 2.5 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 410 2.4 11.7 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD= 60 V, Tj = 150 °C (see Figure 20) - 540 3.3 12.3 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13102 Rev 9 5/15 Electrical characteristics STFW3N150, STP3N150, STW3N150 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. AM03934v1 ID (A) δ=0.5 0.2 0.1 is 0.01 0.1 (o n ) 10µs DS Op Lim era ite tion d by in th m is ax ar R ea 0.1 TO3PF K 10 1 Thermal impedance for TO-3PF 100µs 10 0.05 0.02 1ms 10 100 0.01 10ms Tj=150°C Tc=25°C Single pulse Sinlge pulse 1 -1 -2 1000 VDS(V) 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized BVDSS vs. temperature Figure 11. Static drain-source on resistance Figure 12. Gate charge vs. gate-source voltage Figure 13. Capacitance variations Doc ID 13102 Rev 9 7/15 Electrical characteristics STFW3N150, STP3N150, STW3N150 Figure 14. Normalized gate threshold voltage vs. temperature Figure 15. Normalized on resistance vs. temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs Tj 8/15 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 13102 Rev 9 10% AM01473v1 9/15 Package mechanical data 4 STFW3N150, STP3N150, STW3N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 13102 Rev 9 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/15 Package mechanical data STFW3N150, STP3N150, STW3N150 TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 12/15 Max. 5.15 5.50 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Package mechanical data TO-3PF mechanical data DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia mm. typ min. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 10 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132_C Doc ID 13102 Rev 9 13/15 Revision history 5 STFW3N150, STP3N150, STW3N150 Revision history Table 9. 14/15 Document revision history Date Revision Changes 12-Jan-2007 1 First release 17-Apr-2007 2 Added new value on Table 6. 14-May-2007 3 The document has been reformatted 29-Aug-2007 4 RDS(on) value changed, updated Figure 15 09-Apr-2008 5 Added new package: TO-3PF 13-Feb-2009 6 Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings) 01-Dec-2009 7 – Document status promoted from preliminary data to datasheet – Removed TO-220FH package and mechanical data 10-Dec-2009 8 Corrected VISO value in Table 2: Absolute maximum ratings 29-Jun-2010 9 Corrected unit in Table 3. 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