Transistors IC SMD Type Product specification KDS9952A Features N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Drain to Source Voltage VDSS 30 -30 Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed PD (Note 1b) PD Operating and Storage Temperature TJ, TSTG (Note 1) Thermal Resistance Junction to Ambient (Note 1a) http://www.twtysemi.com 20 2.9 A 10 A 2 1 W 0.9 (Note 1c) Thermal Resistance Junction to Case 20 3.7 1.6 Power Dissipation for Single Operation (Note 1a) V V 15 Power Dissipation for Dual Operation Unit -55 to 150 R JC 40 /W R JA 78 /W [email protected] 4008-318-123 1 of 3 Transistors IC SMD Type Product specification KDS9952A Electrical Characteristics Ta = 25 Parameter Drain–Source Breakdown Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V,TJ = 55 VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V,TJ = 55 Gate-Body Leakage, Forward IGSSF Gate-Body Leakage, Reverse IGSSR Gate Threshold Voltage VGS(th) VGS = 20 V, VDS = 0 V RDS(on) Min N-Ch 30 P-Ch -30 VGS = -20 V, VDS = 0 V A VDS = VGS, ID = 250 A,TJ = 125 VDS = VGS, ID = -250 A 25 -2 P-Ch VDS = VGS, ID = -250 A,TJ = 125 P-Ch -25 1 Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain Charge Qgd http://www.twtysemi.com 1.7 nA -100 nA 2.8 0.7 1.2 2.2 -1 -1.6 -2.8 -0.85 -1.25 -2.5 0.06 0.08 VGS = 10 V, ID = 1.0 A,TJ = 125 0.08 0.13 0.08 0.11 N-Ch VGS = 4.5 V, ID = 0.5 A,TJ = 125 0.11 0.18 VGS =-10 V, ID =-1.0 A 0.11 0.13 0.15 0.21 P-Ch VGS = -4.5 V, ID =- 0.5 A,TJ = 125 ID(on) 0.17 0.2 0.24 0.32 VGS = 10 V, VDS = 5 V N-Ch 15 VGS = -10 V, VDS = -5 V P-Ch -10 VDS = 15 V, ID = 3.7 A N-Ch 6 VDS = -15 V, ID = -2.9 A P-Ch 4 N-Channel N-Ch 320 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 350 N-Ch 225 P-Channel P-Ch 260 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 85 P-Ch 100 N-Channel N-Ch 10 15 VDD = 10 V, ID = 1 A P-Ch 9 40 S pF pF pF 13 20 P-Ch 21 40 P-Channel N-Ch 21 50 VDD = -10 V, ID = -1 A P-Ch 21 90 N-Ch 5 50 P-Ch 8 50 N-Channel N-Ch 9.5 27 VDS = 10 V, ID = 3.7 A,VGS = 10 V P-Ch 10 25 VGS = -10 V, RGEN = 6 (Note 2) (Note 2) N-Ch 1.5 P-Channel P-Ch 1.6 VDS = -10 V, ID = -2.9 A,VGS = -10 V N-Ch 3.3 P-Ch 3.4 [email protected] V A N-Ch VGS = 10 V, RGEN = 6 A 100 VGS = 10 V, ID = 1.0 A VGS =-10 V, ID =-1.0 A,TJ = 125 Unit 2 N-Ch N-Ch Max V ALL VDS = VGS, ID = 250 VGS = -4.5 V, ID =- 0.5 A On–State Drain Current Typ ALL VGS = 4.5 V, ID = 0.5 A Static Drain-Source On-Resistance Type 4008-318-123 ns ns ns ns nC nC nC 2 of 3 Transistors IC SMD Type Product specification KDS9952A Electrical Characteristics Ta = 25 Parameter Symbol Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage Reverse Recovery Time http://www.twtysemi.com VSD trr Testconditons Type Min Typ Max N-Ch 1.2 P-Ch -1.2 VGS = 0 V, IS = 1.25 A (Note 2) N-Ch 0.8 1.3 VGS = 0 V, IS =-1.25 A (Note 2) P-Ch -0.8 -1.3 VGS=0 V, IF=1.25 A,dIF/dt=100A/ VGS=0 V, IF=-1.25 A,dIF/dt=100A/ [email protected] s s N-Ch 75 P-Ch 100 4008-318-123 Unit A V ns 3 of 3