FDI030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Renewable System D G DS G I2-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise note. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter FDI030N06 60 Unit V ±20 V - Continuous (TC = 25oC, Silicon Limited) Drain Current 193* - Continuous (TC = 100oC, Silicon Limited) 136* - Continuous (TC = 25oC, Package Limited) IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Pulsed 772 A (Note 2) 1434 mJ 6 V/ns (Note 3) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) (TC = 25oC) PD A 120 - Derate Above 25oC 231 W 1.54 W/oC -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDI030N06 RθJC Thermal Resistance, Junction to Case, Max. 0.65 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 1 Unit o C/W www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET November 2013 Part Number FDI030N06 Top Mark FDI030N06 Package I2-PAK Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit ID = 250 μA, VGS = 0 V, TC = 25oC 60 - - V - 0.05 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, Referenced to 25oC VDS = 48 V, VGS = 0 V - - 1 VDS = 48 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.5 4.5 V Static Drain to Source On Resistance VGS = 10 V, ID = 75 A - 2.6 3.2 mΩ gFS Forward Transconductance VDS = 10 V, ID = 75 A - 154 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 7380 9815 pF - 1095 1455 pF - 415 625 pF - 116 151 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 48 V, ID = 75 A, VGS = 10 V (Note 4) - 40 - nC - 35 - nC ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30 V, ID = 75 A, VGS = 10 V, RG = 4.7 Ω (Note 4) - 39 87 - 178 366 ns - 54 118 ns - 33 76 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 193 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 772 A VGS = 0 V, ISD = 75 A - - 1.3 V VGS = 0 V, ISD = 75 A, dIF/dt = 100 A/μs - 46 - ns - 50 - nC VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.51 mH, IAS = 75 A, VDD = 50 V, RG = 25Ω, starting TJ = 25°C. 3. ISD ≤ 75 A, di/dt ≤ 450 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 2 www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 700 100 o o 150 C -55 C 10 o 25 C *Notes: 1. 250μs Pulse Test o 10 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 400 IS, Reverse Drain Current [A] 3.0 VGS = 10V 2.5 VGS = 20V 100 o 150 C 10 *Notes: 1. VGS = 0V *Note: TC = 25 C 0 70 140 210 ID, Drain Current [A] 280 1 0.0 350 Figure 5. Capacitance Characteristics Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss *Note: 1. VGS = 0V 2. f = 1MHz 3000 Crss 0 0.1 1.5 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 6000 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 10 12000 9000 o 25 C o 2.0 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.5 RDS(ON) [Ω], Drain-Source On-Resistance 2 1 10 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 6 4 2 0 30 3 VDS = 15V VDS = 30V VDS = 48V 8 *Note: ID = 75A 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 1.1 1.0 *Notes: 1. VGS = 0V 2. ID = 10mA 0.9 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 1000 200 100μs 100 ID, Drain Current [A] ID, Drain Current [A] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1ms 10 10ms Operation in This Area is Limited by R DS(on) 100ms DC SINGLE PULSE 1 o TC = 25 C 200 150 100 Limited by package 50 o TJ = 175 C o 0.1 0.1 RθJC = 0.65 C/W 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 0.5 θJC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 1 0.1 0.2 0.1 PDM 0.05 t1 0.02 0.01 0.01 o 1. ZθJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 t2 *Notes: -4 10 -3 -2 -1 10 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration [sec] [sec] 4 1 10 www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDI030N06 — N-Channel PowerTrench® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 5 www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 6 www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262_0R3 ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2009 Fairchild Semiconductor Corporation FDI030N06 Rev. C2 8 www.fairchildsemi.com FDI030N06 — N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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