FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS(on) = 6.25 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Applications • High Power and Current Handling Capability • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G TO-220 D G S D2-PAK (TO263) G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* VDSS Drain to Source Voltage FDP075N15A_F102 FDB075N15A 150 VGSS Gate to Source Voltage ±20 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Symbol Parameter -Continuous (TC = 25oC) 130 -Continuous (TC = 100oC) 92 - Pulsed V V A (Note 1) 522 A (Note 2) 588 mJ 6.0 V/ns (Note 3) (TC = 25oC) 333 W - Derate above 25oC 2.22 W/oC -55 to +175 oC 300 oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Unit *Package limitation current is 120A. Thermal Characteristics Symbol RθJC RθJA FDP075N15A_F102 FDB075N15A 0.45 Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max 2 Thermal Resistance, Junction to Ambient D2-PAK (1 in pad of 2 oz copper), Max ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 1 62.5 Unit o C/W 40 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET March 2013 Device Marking FDP075N15A Device FDP075N15A_F102 Package TO-220 Device Marking FDB075N15A Device FDB075N15A Package D2-PAK Description F102: Trimmed Leads Reel Size 330mm Quantity 50 Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.1 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1 VDS = 120V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 6.25 7.5 mΩ - 164 - S - 5525 7350 pF - 516 685 pF - 21 - pF - 909 - pF - 77 100 nC - 26 - nC - 11 - nC - 16 - nC - 2.29 - Ω - 28 66 ns - 37 84 ns - 62 134 ns - 21 52 ns ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 100A VDS = 10V, ID = 100A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDS = 75V, VGS = 0V f = 1MHz VDS = 75V, VGS = 0V VDS = 75V, ID = 100A VGS = 10V (Note 4) f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 130 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 520 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.25 V trr Reverse Recovery Time - 97 - ns Qrr Reverse Recovery Charge VGS = 0V, VDD = 75V, ISD = 100A dIF/dt = 100A/μs - 264 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ = 25°C, L = 3 mH, IAS = 19.8 A 3. ISD ≤ 100 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 2 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 400 o 25 C o -55 C 10 *Notes: 1. 250μs Pulse Test 10 o 2. TC = 25 C 7 0.1 1 1 VDS, Drain-Source Voltage[V] 3 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] 400 IS, Reverse Drain Current [A] 8 VGS = 10V VGS = 20V 6 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 4 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1.5 10 Ciss 100 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 RDS(ON) [mΩ], Drain-Source On-Resistance o 175 C 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 Crss VDS = 30V VDS = 75V VDS = 120V 8 6 4 2 *Note: ID = 100A 0 100 200 0 3 30 60 Qg, Total Gate Charge [nC] 90 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 100A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current 1000 140 100 1ms 10 1 Operation in This Area is Limited by R DS(on) 10ms 100ms DC *Notes: 0.1 100 ID, Drain Current [A] ID, Drain Current [A] VGS = 10V 120 100μs o Limited by package 80 60 40 o 1. TC = 25 C RθJC = 0.45 C/W o 0.01 0.1 20 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 Figure 11. Eoss vs. Drain to Source Voltage 6 100 IAS, AVALANCHE CURRENT (A) 200 EOSS, [μJ] 5 4 3 2 1 0 25 50 75 100 125 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 175 Figure 12. Unclamped Inductive Switching Capability 7 0 50 75 100 125 150 o TC, Case Temperature [ C] TJ = 25 oC 10 TJ = 150 oC 1 0.001 150 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 t2 *Notes: o Single pulse 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 1. ZθJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 6 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 7 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 (F102: Trimmed Leads) Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 8 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET Mechanical Dimensions D2PAK Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FDP075N15A_F102 / FDB075N15A Rev. C2 10 www.fairchildsemi.com FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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