Si4862DY New Product Vishay Siliconix N-Channel 16-V (D-S) MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.3-mW rDS(on) Low Gate Resistance 100% RG Tested APPLICATIONS D Synchronous Rectification D Low Output Voltage Synchronous Rectification D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 16 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 25 17 20 13 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID A 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71439 S-03662—Rev. B, 14-Apr-03 www.vishay.com 1 Si4862DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) V VDS = 0 V, VGS = "8 V "100 VDS = 12.8 V, VGS = 0 V 1 VDS = 12.8 V, VGS = 0 V, TJ = 55_C 5 VDS w 5 V, VGS = 4.5 V nA mA 30 A VGS = 4.5 V, ID = 25 A 0.0027 0.0033 VGS = 2.5 V, ID = 20 A 0.0045 0.0055 Forward Transconductancea gfs VDS = 6 V, ID = 25 A 140 Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 48 70 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time nC 11.8 8.9 0.5 W 1.3 2.2 td(on) 42 60 tr 38 60 120 180 50 75 80 120 Rise Time Turn-Off Delay Time VDS = 6 V, VGS = 4.5 V, ID = 25 A VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 5 thru 2.5 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 2V 10 40 30 TC = 125_C 20 25_C 10 - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 71439 S-03662—Rev. B, 14-Apr-03 Si4862DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 10000 0.008 8000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.010 VGS = 2.5 V 0.006 0.004 VGS = 4.5 V 0.002 Ciss 6000 4000 Coss 2000 0.000 Crss 0 0 10 20 30 40 50 60 0 3 ID - Drain Current (A) 12 15 On-Resistance vs. Junction Temperature Gate Charge 1.6 VDS = 6 V ID = 25 A 4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 9 VDS - Drain-to-Source Voltage (V) 5 3 2 1 0 0 12 24 36 48 1.2 1.0 0.8 0.6 - 50 60 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) - On-Resistance ( W ) 60 TJ = 150_C 10 TJ = 25_C 0.012 0.009 0.006 ID = 25 A 0.003 0.000 1 0.00 VGS = 4.5 V ID = 25 A 1.4 Qg - Total Gate Charge (nC) I S - Source Current (A) 6 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71439 S-03662—Rev. B, 14-Apr-03 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4862DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 50 0.2 40 - 0.0 Power (W) V GS(th) Variance (V) ID = 250 mA - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71439 S-03662—Rev. B, 14-Apr-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1