VISHAY SI9169BQ-T1-E3

Si9169
Vishay Siliconix
High Frequency 1-A Synchronous Buck/Boost Converter
DESCRIPTION
FEATURES
The Si9169 provides fully integrated synchronous buck or
boost converter solution for the latest one cell Lithium Ion
cellular phones. Capable of delivering up to 1 A of output
current at + 3.6 V, the Si9169 provides ample power for
various baseband circuits as well as for some PAs. It
combines the 2 MHz switching controller with fully
integrated high-frequency MOSFETs to deliver the smallest
and most efficient converter available today. The 2 MHz
switching frequency reduces the inductor height to new
level of 2 mm and minimizes the output capacitance
requirement to less than 10 µF with peak-to-peak output
ripple as low as 10 mV. Combined with low-gate charge
high-frequency MOSFETs, the Si9169 delivers efficiency up
to 95 %. The programmable pulse skipping mode maintains
this high efficiency even during the standby and idle modes
to increase overall battery life and talktime. In order to
extract the last ounce of power from the battery, the Si9169
is designed with 100 % duty cycle control for buck mode.
With 100 % duty cycle, the Si9169 operates like a saturated
linear regulator to deliver the highest potential output
voltage for longer talktime.
•
•
•
•
•
•
•
•
Voltage Mode Control
Fully Integrated MOSFET Switches
RoHS
2.7 V to 6 V Input Voltage Range
COMPLIANT
Programmable PWM/PSM Control
- Up to 1 A Output Current at 3.6 V in PWM
- Up to 2 MHz Adjustable Switching Frequency in PWM
- Less than 200 µA Quiescent Current in PSM
Integrated UVLO and POR
Integrated Soft-Start
Synchronization
Shutdown Current < 1 µA
Si9169 can be a drop-in replacement of Si9165 provided Pin
1 is not connected. For full 1 A load condition, Pin 1 is
required to be connected to low power controller ground.
The Si9169 is available in lead (Pb)-free TSSOP-20 pin
package. In order to satisfy the stringent ambient
temperature requirements, the Si9169 is rated to handle the
industrial temperature range of - 25 °C to 85 °C and - 40 °C
to 85 °C.
FUNCTIONAL BLOCK DIAGRAM
INPUT
2.7 to 6 V
OUTPUT
0 to 1 A
INPUT
2.7 to 6 V
COIL VO
VDD
MODE
VS VIN/OUT
FB
OUTPUT
0 to 1 A
COIL
VS
VIN/OUT
VO
VDD
PGND
MODE
FB
SHUTDOWN COMP
COMP
ROSC
SHUTDOWN ROSC
PWM/PSM
SYNC
PGND
REF
GND
Boost Configuration
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
PWM/PSM
REF
SYNC PGND GND
Buck Configuration
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Si9169
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced to GND
VDD
MODE PWM/PSM, SYNC, SD, VREF, ROSC, COMP, FB
VO
PGND
Voltages Referenced to PGND
VS, VIN/OUT
COIL
Peak Output Current
Continuous Output Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation (Package)a
20-Pin TSSOP (Q Suffix)b
Thermal Impedance (ΘJA)
20-Pin TSSOPc
Notes:
a. Device Mounted with all leads soldered or welded to PC board.
b. Derate 11 mW/°C above 60 °C.
c. With Pin 1 connected to GND plane.
Limit
Unit
6.5
- 0.3 V to VDD + 0.3 V
- 0.3 V to VS + 0.3 V
± 0.3
V
6.5
- 0.4 V to VIN/OUT + 0.4 V
3 A for 1 ms
1.4
- 65 to 150
150
1.0
90
V
A
°C
W
°C/W
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Voltages Referenced to GND
VDD
MODE, PWM/PSM, SYNC, SD
Voltages Referenced to PGND
VS, VIN/OUT
FOSC
ROSC
VREF Capacitor
Limit
Unit
2.7 V to 6 V V
0 V to VDD
V
2.7 V to 6 V
200 kHz to 2 MHz
25 kΩ to 300 kΩ
0.1
V
kΩ
µF
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
2.7 V < VDD < 6 V,
VIN/OUT = 3.3 V, VS = 3.3 V
Mina
Typb
Maxa
IREF = 0 A
1.265
1.3
1.330
TA = 25 °C, IREF = 0
1.280
1.3
1.320
Limitse
Unit
Reference
Output Voltage
VREF
Load Regulation
ΔVREF
Power Supply Rejection
PSRR
VDD = 3.3 V, - 500 µA < IREF < 0
V
3
mV
60
dB
UVLO
Under Voltage Lockout (turn-on)
Hysteresis
VUVLO/LH
VHYS
2.3
VUVLOLH - VUVLOHL
2.4
2.5
0.1
V
Soft-Start Time
SS Time
tSS
6
ms
Mode
Logic High
VIH
Logic Low
VIL
Input Current
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2
IL
0.7 VDD
0.3 VDD
- 1.0
1.0
V
µA
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
Si9169
Vishay Siliconix
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
2.7 V < VDD < 6 V,
VIN/OUT = 3.3 V, VS = 3.3 V
Limitse
Mina
Typb
Maxa
Unit
SD, SYNC, PWM/PSM
Logic High
VIH
Logic Low
VIL
2.4
0.8
IL
Input Current
- 1.0
1.0
V
µA
Oscillator
FMAX
Maximum Frequency
2
Nominal 1.60 MHz, ROSC = 30 kΩ
Accuracy
Maximum Duty Cycle
(Buck, Non LDO Mode)
DMAX
FSW = 2 MHz
Maximum Duty Cycle (Boost)
20
Si9169BQ
75
85
Si9169DQ
73
85
Si9169BQ
52
65
Si9169DQ
50
65
FSYNC/FOSC
SYNC Range
MHz
- 20
1.2
SYNC Low Pulse Width
50
SYNC High Pulse Width
50
%
1.5
ns
SYNC tr, tf
50
Error Amplifier
Input Bias Current
IBIAS
Open Loop Voltage Gain
AVOL
FB Threshold
VFB
Unity Gain BW
BW
IEA
Output Current
VFB = 1.5 V
-1
50
60
TA = 25 °C
1.270
1.30
1.330
1.255
1.30
1.340
1
dB
2
Source (VFB = 1.05 V), VCOMP = 0.75 V
-3
Sink (VFB = 1.55 V), VCOMP = 0.75 V
1
VOUT ≤ 4.2 V
1000
µA
V
MHz
-1
3
mA
Output Current
Output Current
(PWM)
Output Current
(PSM)
Boost Modec
Buck
Moded
Boost Mode
c
IOUT
Buck Moded
rDS(on) N-Channel
rDS(on) P-Channel
rDS(on)
1.8 V ≤ VOUT ≤ 5.0 V
1000
VIN = 3.3 V, VOUT = 3.6 V
150
VIN = 3.6 V, VOUT = 2.7 V
150
VS ≥ 3.3 V
mA
130
300
160
330
mΩ
Over Temperature Protection
Trip Point
Rising Temperature
Hysteresis
165
°C
25
Supply
Normal Mode
PSM Mode
Shutdown Mode
IDD
VDD = 3.3 V, FOSC = 2 MHz
500
750
VDD = 3.3 V
180
250
VDD = 3.3 V, SD = 0 V
µA
1
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. VIN = VDD, VOUT = VIN/OUT = VS = VO, L = 1.5 µH, VIN ≤ VOUT
d. VIN = VDD = VS = VIN/OUT, VOUT = VO, L = 1.5 µH, VIN ≥ VOUT
e. Limits are for both Si9169BQ (- 25 °C to 85 °C) and Si9169DQ (- 40 °C to 85 °C) unless otherwise noted.
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
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Si9169
Vishay Siliconix
1.310
1.32
1.305
1.31
V REF (V)
V REF (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.300
1.295
1.30
1.29
1.290
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.28
- 50
6.0
0
50
VDD - (V)
100
150
Temperature (° C)
VREF vs. VDD
VREF vs. Temperature
10000
2.00
1.95
1.90
Frequency (kHz)
Frequency (MHz)
ROSC = 25 kΩ
1.85
1.80
1000
1.75
1.70
- 100
100
- 50
0
50
100
150
10
100
Temperature (° C)
ROSC (kΩ)
Frequency vs. Temperature
Frequency vs. ROSC
100
95
PSM- 3 V
90
90
PSM- 3.6 V
85
85
PSM- 4.2 V
PWM- 3 V
80
PWM- 3.6 V
75
PWM- 2.7 V
PSM- 2.7 V
80
75
70
PWM- 4.2 V
70
PWM- 3.3 V
PSM- 3.3 V
Efficiency (%)
Efficiency (%)
95
1000
65
65
60
60
1
10
100
Load Current (mA)
Buck Mode Efficiency, VO = 2.7 V
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1000
1
10
100
1000
Load Current (mA)
Boost Mode Efficiency, VO = 3.6 V
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
Si9169
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
800
250
700
200
I DD (µA)
I DD (µA)
600
500
150
400
100
300
50
200
2
3
4
5
6
2
7
3
4
5
6
7
VDD - (V)
VDD - (V)
PSM Supply Current
PWM Supply Current
PIN CONFIGURATION AND ORDERING INFORMATION
TSSOP-20
GND
SD
PWM/PSM
VIN/OUT
VIN/OUT
VIN/OUT
SYNC
GND
VREF
FB
1
2
3
4
5
6
7
8
9
10
Si9169
ORDERING INFORMATION
20
19
18
17
16
15
14
13
12
11
COIL
COIL
MODE
PGND
PGND
VS
VO
VDD
ROSC
COMP
Part Number
Temperature Range
Si9169BQ-T1-E3
- 25 to 85 °C
Si9169DQ-T1-E3
- 40 to 85 °C
Package
Tape and Reel
Top View
PIN DESCRIPTION
Pin Number
Name
1
GND
2
3
SD
Function
Low power controller ground. Can be left unconnected for load currents below 600 mA.
Shuts down the IC completely and decreases current consumed by the IC to < 1 µA.
PWM/PSM Logic high = PWM mode, logic low = PSM mode. In PSM mode, synchronous rectification is disabled.
4, 5, 6
VIN/OUT
7
SYNC
Input node for buck mode and output node for boost mode.
Externally controlled synchronization signal. Logic high to low transition forces the clock synchronization. If not
used, the pin must be connected to VDD, or logic high.
8
GND
Low power controller ground
9
VREF
1.3 V reference. Decoupled with 0.1 µF capacitor.
10
FB
11
COMP
12
Rosc
External resistor to determine the switching frequency.
13
VDD
Input supply voltage for the analog circuitry. Input voltage range is 2.7 V to 6 V.
14
VO
Direct output voltage sensing to control peak inductor current in PSM mode.
15
VS
Supply voltage for the internal MOSFET drive circuit.
16, 17
PGND
18
MODE
19, 20
COIL
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
Output voltage feedback connected to the inverting input of an error amplifier.
Error amplifier output for external compensation network.
Power ground.
Determines the converter topology. Connect to AGND for buck or VDD for boost.
Inductor connection node
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Si9169
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
SD
VDD
VS
VIN/OUT
Positive
Supply
Reference
Threshold
Generator
Soft-Start
Timer
UVLO
POR
Bias
Generator
OTP
VREF
FB
COMP
PWM
Modulator
1.0 V
Ramp
P
PWMIN
PWMEN
0.5 V
SYNC
PWM/PSM
Select
Oscillator
ROSC
PSMEN
COSC
COIL
Drivers
N
PSMIN
PSM
Modulator
VO
PWM/PSM
MODE
Negative
Return and
Substrate
GND
PGND
DETAIL OPERATIONAL DESCRIPTION
Start-Up
The UVLO circuit prevents the internal MOSFET switches
and oscillator circuit from turning on, if the voltage on VDD pin
is less than 2.5 V. With typical UVLO hysteresis of 0.1 V,
controller is continuously powered on until the VDD voltage
drops below 2.4 V. This hysteresis prevents the converter
from oscillating during the start-up phase and unintentionally
locking up the system. Once the VDD voltage exceeds the
UVLO threshold, and with no other shutdown condition
detected, an internal Power-On-Reset timer is activated
while most circuitry, except the output driver, are turned on.
After the POR timeout of about 1 ms, the internal soft-start
capacitor is allowed to charge. When the soft-start capacitor
voltage reaches 0.5 V, the PWM circuit is enabled.
Thereafter, the constant current charging the soft-start
capacitor will force the output voltage to rise gradually
without overshooting. To prevent negative undershoot, the
synchronous switch is tri-stated until the duty cycle reaches
about 10 %. In tri-state, the high-side P-Channel MOSFET is
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6
turned off by pulling up the gate voltage to VS potential. The
low-side N-Channel MOSFET is turned off by pulling down
the gate voltage to PGND potential. Note that the Si9169 will
always soft starts in the PWM mode regardless of the voltage
level on the PWM/PSM pin.
Shutdown
The Si9169 is designed to conserve as much battery life as
possible by decreasing current consumption of IC during
normal operation as well as the shutdown mode. With logic
low level on the SD pin, current consumption of the Si9169 is
decreased to less than 1 µA by shutting off most of the
circuits. The logic high enables the controller and starts up as
described in "Start-Up" section above.
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
Si9169
Vishay Siliconix
DETAIL OPERATIONAL DESCRIPTION (CONT’D)
Over Temperature Protection
The Si9169 is designed with over temperature protection
circuit to prevent MOSFET switches from running away. If
the temperature reaches 165 °C, internal soft-start capacitor
is discharged, shutting down the output stage. Converter
remains in the disabled mode until the temperature in the IC
decreases below 140 °C.
PWM Mode
With PWM/PSM mode pin in logic high condition, the Si9169
operates in constant frequency (PWM) mode. As the load
and line varies, switching frequency remain constant. The
switching frequency is programmed by the Rosc value as
shown by the Oscillator curve. In the PWM mode, the
synchronous drive is always enabled, even when the output
current reaches 0 A to assure the converter is operating in
continuous current mode. In continuous current mode,
transfer function of the converter remain constant, providing
fast transient response. If the converter operates in
discontinuous current mode, overall loop gain decreases and
transient response time can be ten times longer than if the
converter remain in continuous current mode. This transient
response time advantage can significantly decrease the
hold-up capacitors needed on the output of dc-dc converter
to meet the transient voltage regulation. Therefore, the
PWM/PSM pin is available to dynamically program the
controller.
The maximum duty cycle of the Si9169 can reach 100 % in
buck mode. This allows the system designers to extract out
the maximum stored energy from the battery. Once the
controller delivers 100 % duty cycle, converter operates like
a saturated linear regulator. At 100 % duty cycle,
synchronous rectification is completely turned off. Up to a
maximum duty cycle of 80 % at 2 MHz switching frequency,
controller maintains perfect output voltage regulation. If the
input voltage drops below the level where the converter
requires greater than 80 % duty cycle, controller will deliver
100 % duty cycle. This instantaneous jump in duty cycle is
due to fixed BBM time, MOSFET delay/rise/fall time, and the
internal propagational delays. In order to maintain regulation,
controller might fluctuate its duty cycle back and forth from
100 % to something less than maximum duty cycle while the
converter is operating in this input voltage range. If the input
voltage drops further, controller will remain on 100 %. If the
input voltage increases to a point where it requires less than
80 % duty cycle, synchronous rectification is once again
activated.
The maximum duty cycle under boost mode is internally
limited to 75 % to prevent inductor saturation. If the converter
is turned on for 100 % duty cycle, inductor never gets a
chance to discharge its energy and eventually saturates.
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
In boost mode, synchronous rectifier is always turned on for
minimum or greater duration as long as the switch has been
turned on. The controller will deliver 0 % duty cycle, if the
input voltage is greater than the programmed output voltage.
Because of signal propagation time and MOSFET delay/rise/
fall time, controller will not transition smoothly from minimum
controllable duty cycle to 0 % duty cycle. For example,
controller may decrease its duty cycle from 5 % to 0 %
abruptly, instead of gradual decrease you see from 75 % to
5 %.
Pulse Skipping Mode
The gate charge losses produced from the Miller
capacitance of MOSFETs are the dominant power
dissipation parameter during light load (i.e. < 10 mA).
Therefore, less gate switching will improve overall converter
efficiency. This is exactly why the Si9169 is designed with
pulse skipping mode. If the PWM/PSM pin is connected to
logic low level, converter operates in pulse skipping
modulation (PSM) mode. During the pulse skipping mode,
quiescent current of the controller is decreased to
approximately 200 µA, instead of 500 µA during the PWM
mode. This is accomplished by turning off most of internal
control circuitry and utilizing a simple constant on-time
control with feedback comparator. The controller is designed
to have a constant on-time and a minimum off-time acting as
the feedback comparator blanking time. If the output voltage
drops below the desired level, the main switch is first turned
on and then off. If the applied on-time is insufficient to provide
the desired voltage, the controller will force another on and
off sequence, until the desired voltage is accomplished. If the
applied on-time forces the output to exceed the desired level,
as typically found in the light load condition, the converter
stays off. The excess energy is delivered to the output slowly,
forcing the converter to skip pulses as needed to maintain
regulation. The on-time and off-time are set internally based
on inductor used (1.5 µH typical), mode pin selection and
maximum load current. Wide duty cycle range can be
achieved in both buck and boost configurations. In pulse
skipping mode, synchronous rectifier drive is also disabled to
further decrease the gate charge loss, which in turn improves
overall converter efficiency.
Reference
The reference voltage of the Si9169 is set at 1.3 V. The
reference voltage is internally connected to the non-inverting
inputs of the error amplifier. The reference is decoupled with
0.1 µF capacitor.
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Si9169
Vishay Siliconix
DETAIL OPERATIONAL DESCRIPTION (CONT’D)
Error Amplifier
Break-Before-Make Timing
The error amplifier gain-bandwidth product and slew rate is
critical parameters which determines the transient response
of converter. The transient response is function of both small
and large signal response. The small signal is the converter
closed loop bandwidth and phase margin while the large
signal is determined by the error amplifier dv/dt and the
inductor di/dt slew rate. Besides the inductance value, error
amplifier determines the converter response time. In order to
minimize the response time, the Si9169 is designed with 2
MHz error amplifier gain-bandwidth product to generate the
widest converter bandwidth and 3.5 V/µs slew rate for ultrafast large signal response.
A proper BBM time is essential in order to prevent shootthrough current and maintain high efficiency. The breakbefore-make time is set internally at 20 ns at VS = 3.6 V. The
high and low-side MOSFET drain voltages are monitored
and when the drain voltage reaches the 1.75 V below or
above its initial starting voltage, 20 ns BBM time is set before
the other switch turns on. The maximum controllable duty
cycle is limited by the BBM time. Since the BBM time is fixed,
maximum controllable duty cycle will vary depending on the
switching frequency.
Oscillator
The high- and low-side switches are integrated to provide
optimum performance and to minimize the overall converter
size. Both, high and low-side switches are designed to
handle up to 1 A of continuous current. The MOSFET
switches were designed to minimize the gate charge loss as
well as the conduction loss. For the high frequency
operation, switching losses can exceed conduction loss, if
the switches are designed incorrectly. Under full load,
efficiency of 90 % is accomplished with 3.6 V battery voltage
in both buck and boost modes (+ 2.7 V output voltage for
buck mode and + 5 V output voltage for boost mode).
The oscillator is designed to operate up to 2 MHz minimal.
The 2 MHz operating frequency allows the converter to
minimize the inductor and capacitor size, improving the
power density of the converter. Even with 2 MHz switching
frequency, quiescent current is only 500 µA with unique
power saving circuit design. The switching frequency is
easily programmed by attaching a resistor to ROSC pin. See
oscillator frequency versus ROSC curve to select the proper
values for desired operating frequency. The tolerance on the
operating frequency is ± 20 % with 1 % tolerance resistor.
Output MOSFET Stage
Synchronization
The synchronization to external clock is easily accomplished
by connecting the external clock into the SYNC pin. A logic
high to low transition synchronizes the clock. The external
clock frequency must be within 1.2 to 1.5 times the internal
clock frequency.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70945.
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Document Number: 70945
S-72058-Rev. E, 08-Oct-07
Package Information
Vishay Siliconix
TSSOP: 20-LEAD (POWER IC ONLY)
B
D
4X
N
0.20 C A−B
D
0.20 H A−B
D
2X N/2 TIPS
E1
E
bbb
1.00
b
M
C
A−B
A2
E/2
D
9
0.05
C
A
1 2 3
1.00 DIA.
aaa
H
A1
e
1.00
C
C
SEATING
PLANE
A
D
(14_)
SIDE VIEW
MILLIMETERS
0.25
PARTING
LINE
+
+
H
L
(∝)
6
c
1.00
B
B
(14_)
DETAIL ‘A’
(SCALE: 30/1)
(VIEW ROTATED 90_ C.W.)
C
L
e/2
X
X = A and B
LEAD SIDES
TOP VIEW
Document Number: 72818
28-Jan-04
SEE
DETAIL ‘A’
Dim
A
A1
A2
aaa
b
b1
bbb
c
c1
D
E
E1
e
L
N
P
P1
∝
Min
Nom
Max
—
—
1.10
0.05
—
0.15
0.85
0.90
0.95
0.076
0.19
−
0.30
0.19
0.22
0.25
0.10
0.09
0.09
−
0.20
0.127
0.16
6.50 BSC
6.40 BSC
4.30
4.40
4.50
0.65 BSC
0.50
0.60
0.70
20
4.2
3.0
0_
—
8_
ECN: S-40082—Rev. A, 02-Feb-04
DWG: 5923
END VIEW
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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